Samsung Electronics Co., Ltd.

Yong-jin Yoon

Sang-beom Kang

Qi Wang

A nonvolatile memory device comprises a first voltage generation unit, a second voltage generation unit, a first circuit block, and a discharge unit. The first voltage generation unit generates a first voltage with a first magnitude. The second voltage generation unit generates a second voltage with a second magnitude greater than the first magnitude. The first circuit block selectively receives the first voltage or the second voltage through an input node. The discharge unit discharges the input node between a time point where the input node has been charged with the second voltage and a time point where the input node receives the first voltage.

Growing community of inventors

Gangseo-gu, South Korea

Yong-jin Yoon