Siltron, Inc.

Lg Siltron Incorporated

Postech Foundation

Sk Siltron Co., Ltd.

Yong Jin Kim

Dong Kun Lee

Doo Soo Kim

Il Soo Choi

Hak Eui Wang

Sung Jin An

Jin Woo Ahn

Ho Jun Lee

Kye Jin Lee

Disclosed is a single-crystal ingot manufacturing apparatus, which includes a crucible in which a melt is accommodated, a heater configured to heat the crucible, a heat shield member configured to shield radiant heat from the heater and the melt, and a neck cover configured to encompass a seed crystal unit above the crucible with being introduced into an opening of the heat shield member, the radiant heat being not shielded in the opening, the neck cover being vertically moved in linkage to vertical movement of the seed crystal unit within a predetermined range.

Single crystal ingot, apparatus and method for manufacturing the same

Disclosed are a semiconductor device, a light emitting device, and a method of manufacturing the same. The semiconductor device includes a substrate, a plurality of rods aligned on the substrate, a metal layer disposed on the substrate between the rods, and a semiconductor layer disposed on and between the rods. Electrical and optical characteristics of the semiconductor device are improved due to the metal layer.

Semiconductor device, light emitting device and method of manufacturing same

The present invention provides to a gallium nitride (GaN) semiconductor and a method of manufacturing the same, capable of reducing crystal defects caused by a difference in lattice parameters, and minimizing internal residual stress. In particular, since a high-quality GaN thin film is formed on a silicon wafer, manufacturing costs can be reduced by securing high-quality wafers with a large diameter at a low price, and applicability to a variety of devices and circuit can also be improved.

Method of manufacturing gallium nitride semiconductor

Provided are a nitride semiconductor device and method of manufacturing the same. In the method, semiconductor nanorods are vertically grown on a substrate, and then a nitride semiconductor thin film is deposited on the substrate having the semiconductor nanorods. Accordingly, a high-quality nitride semiconductor thin film can be deposited on a variety of inexpensive, large-sized substrates. Also, because the nitride semiconductor thin film containing the semiconductor nanorods can easily emit light through openings between the nanorods, internal scattering can be greatly reduced. Thus, the nitride semiconductor thin film can be usefully employed in optical devices such as light emitting diodes and electronic devices.

Nitride semiconductor device and method of manufacturing the same

Growing community of inventors

Gumi-si, South Korea

Yong Jin Kim