Amkor Technology, Inc.

Amkor Technology Singapore Holding Pte. Ltd.

Yong Jae Ko

Won Chul Do

Kwang Seok Oh

Jo Hyun Bae

Sung Woo Lim

Yun Ah Kim

Ji Chang Lee

Jin Seong Kim

Yeon Seung Jung

Yeong Beom Ko

In one example, a semiconductor device comprises a main substrate having a top side and a bottom side, a first electronic component on the top side of the main substrate, a second electronic component on the bottom side of the main substrate, a substrate structure on the bottom side of the main substrate adjacent to the second electronic component, and an encapsulant structure comprising an encapsulant top portion on the top side of the main substrate and contacting a side of the first electronic component, and an encapsulant bottom portion on the bottom side of the main substrate and contacting a side of the second electronic component and a side of the substrate structure. Other examples and related methods are also disclosed herein.

Semiconductor devices and methods of manufacturing semiconductor devices

A method of manufacturing an electronic device. For example and without limitation, various aspects of the present disclosure provide a method of manufacturing an electronic device that comprises a die comprising a circuit side and a second die side opposite the circuit side, a through hole in the die that extends between the second side of the die and the circuit side of the die, an insulating layer coupled to the inner wall of the through hole, a through electrode inside of the insulating layer, a dielectric layer coupled to the second side of the die, and a conductive pad coupled to the through electrode. The through electrode and the insulating layer may, for example, extend substantially the same distance from the second side of the die.

Method of manufacturing an electronic device comprising a conductive pad on a protruding-through electrode

An electronic device. For example and without limitation, various aspects of the present disclosure provide an electronic device that comprises a die comprising a circuit side and a second die side opposite the circuit side, a through hole in the die that extends between the second side of the die and the circuit side of the die, an insulating layer coupled to the inner wall of the through hole, a through electrode inside of the insulating layer, a dielectric layer coupled to the second side of the die, and a conductive pad coupled to the through electrode. The through electrode and the insulating layer may, for example, extend substantially the same distance from the second side of the die.

Electronic device comprising a conductive pad on a protruding-through electrode

A semiconductor device. For example and without limitation, various aspects of the present disclosure provide a semiconductor device that comprises a semiconductor die comprising an inactive die side and an active die side opposite the inactive die side, a through hole in the semiconductor die that extends between the inactive die side and the active die side where the through hole comprises an inner wall, an insulating layer coupled to the inner wall of the through hole, a through electrode inside of the insulating layer, a dielectric layer coupled to the inactive die side, and a conductive pad coupled to the through electrode.

Semiconductor device comprising a conductive pad on a protruding-through electrode

To form a semiconductor device, a through electrode is formed in a semiconductor die, and a dielectric layer is then formed to cover the through electrode. The dielectric layer has an opening by being partially etched to allow the through electrode to protrude to the outside, or has a thickness thinner overall so as to allow the through electrode to protrude to the outside. Subsequently, a conductive pad is formed on the through electrode protruding to the outside through the dielectric layer by using an electroless plating method.

Conductive pad on protruding through electrode

Conductive pad on protruding through electrode semiconductor device

A semiconductor device and a manufacturing method thereof are provided. In one embodiment of the manufacturing method of the semiconductor device, a through electrode is formed on a semiconductor die, and a dielectric layer such as a photopolymer is coated on the through electrode to cover the through electrode. Under exposure is performed on the dielectric layer, thereby partially removing the dielectric layer by development. As a result, a top end of the through electrode is exposed to the outside or protrudes through the dielectric layer. The dielectric layer remaining on the top end of the through electrode may be removed by performing a plasma descum process, if needed.

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Gwangju, South Korea

Yong Jae Ko