Samsung Electronics Co., Ltd.

University-industry Cooperation Group of Kyung Hee University

Yong-Il Kwon

Jae-Yeon Song

Kyung-Mo Park

Sung-oh Hwang

Hauk Han

Doug Young Suh

Jeonggil Lee

JungSuk Oh

Tae Sun Ryu

Doug-Young Suh

Yong-Hun Lee

Jun-Oh Kim

Myoung-Bum Lee

Il-Woo Kim

Jeong-gil Lee

An apparatus and method for transmitting a multimedia data packet are provided. The method includes receiving Bottom-up Network Abstraction Layer (B-NAL) information from a network entity, determining a media data quality based on the received B-NAL information and generating media data having the determined media data quality, and generating a packet including the generated media data and transmitting the packet to the network entity.

Method and apparatus for transmitting a multimedia data packet using cross-layer optimization

An apparatus and a method for providing an adaptive multimedia service in a mobile communication system are provided. The method of providing a multimedia service includes collecting user-preference-aware information, device-capability-aware information, and network-aware information, generating a packet according to a correlation among the user-preference-aware information, the device-capability-aware information, and the network-aware information, and providing a multimedia service according to the generated packet.

Apparatus and method for providing adaptive multimedia service

A memory device includes a gate structure, a contact plug, and a spacer. The gate structure includes first and second conductive layer patterns sequentially stacked on a substrate. The contact plug passes through the second conductive layer pattern, and a sidewall of the contact plug directly contacts at least a portion of the second conductive layer pattern. The spacer surrounds a portion of the sidewall of the contact plug and contacting the gate structure.

Memory device and method of manufacturing the same

A semiconductor device includes a lower insulating pattern on a semiconductor substrate, a lower gate pattern on the lower insulating pattern and formed of a doped polysilicon layer, a residual insulating pattern with an opening exposing a portion of a top surface of the lower gate pattern, an upper gate pattern on the residual insulating pattern, the upper gate pattern filling the opening, and a diffusion barrier pattern in contact with the portion of the top surface of the lower gate pattern and extending between the residual insulating pattern and the upper gate pattern.

Semiconductor devices and methods of fabricating the same

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Incheon, South Korea

Yong-Il Kwon