Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Dongwoo Fine-chem Co., Ltd.

Yong-il Kim

Dae-Ik Kim

Kyung-wook Hwang

Ha-nul Yoo

Wan-tae Lim

Sung-hyun Sim

Makoto Yoshida

Hyeong-sun Hong

Jin-sub Lee

Nam-goo Cha

Hye-seok Noh

Bong-Soo Kim

Young-jin Choi

Nam-Jung Kang

Yun-Sung Lee

Han-kyu Seong

Dong-gun Lee

Kye-Hee Yeom

Sung-Gue Lee

Gil-Sub Kim

Jung-sub Kim

Seung-Hyun Ahn

Ji-hye Yeon

Sang-Tae Kim

Ahn-Ho Lee

Shi-Jin Sung

Jai-kyun Park

Baik-Soon Choi

Jong-seop Lee

Min-gyeong Gwon

Won-Jae Kim

Dae-Young Jang

Ho-Jun Yi

Kyu-Won Lee

Woo-Jeong Cho

Kyong-Ho Lee

A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.

Light-emitting diode (LED), LED package and apparatus including the same

A light-emitting diode (LED) package includes: a reflective structure including a cavity, a bottom portion having a through hole, and a sidewall portion surrounding the cavity and the bottom portion and having an inclined inner side surface; an electrode pad inserted into the through hole; an LED on the bottom portion in the cavity, the LED including a light-emitting structure electrically connected to the electrode pad and a phosphor formed on the light-emitting structure; and a lens structure filling the cavity and formed on the reflective structure.

Light-emitting diode package and method of manufacturing the same

A light-emitting diode (LED) device includes a plurality of light-emitting structures spaced apart from each other; a plurality of electrode layers on first surfaces of the plurality of light-emitting structures, respectively; a protection layer on second surfaces of each of the plurality of light-emitting structures, respectively; a separation layer to electrically insulate the plurality of light-emitting structures from each other and electrically insulate the plurality of electrode layers from each other; a plurality of phosphor layers on second surfaces of the plurality of light-emitting structures, respectively, each of the plurality of the phosphor layers each to output a different color of light; and a partitioning layer between the phosphor layers and separating the plurality of phosphor layers from each other, the partitioning layer including a substrate structure, an insulation structure, or a metal structure.

Light-emitting diode (LED) device for realizing multi-colors

A light-emitting device package includes a plurality of luminescent structures arranged spaced apart from each other in a horizontal direction, an intermediate layer on the plurality of luminescent structures, and wavelength conversion layers on the intermediate layer, the wavelength conversion layers vertically overlapping separate, respective luminescent structures of the plurality of luminescent structures. The intermediate layer may include a plurality of layers, the plurality of layers associated with different refractive indexes, respectively. The intermediate layer may include a plurality of sets of holes, each set of holes may include a separate plurality of holes, and each wavelength conversion layer may vertically overlap a separate set of holes on the intermediate layer.

Light-emitting device packages and methods of manufacturing the same

A semiconductor device capable of reducing a thickness, an electronic product employing the same, and a method of fabricating the same are provided. The method of fabricating a semiconductor device includes preparing a semiconductor substrate having first and second active regions. A first transistor in the first active region includes a first gate pattern and first impurity regions. A second transistor the second active region includes a second gate pattern and second impurity regions. A first conductive pattern is on the first transistor, wherein at least a part of the first conductive pattern is disposed at a same distance from an upper surface of the semiconductor substrate as at least a part of the second gate pattern. The first conductive pattern may be formed on the first transistor while the second transistor is formed.

Semiconductor devices including buried gate electrodes

A capacitor structure includes a plurality of lower electrodes on a substrate, the lower electrodes having planar top surfaces and being arranged in a first direction to define a lower electrode column, a plurality of lower electrode columns being arranged in a second direction perpendicular to the first direction to define a lower electrode matrix, a plurality of supports on upper sidewalls of at least two adjacent lower electrodes, a dielectric layer on the lower electrodes and the supports, and an upper electrode on the dielectric layer.

Methods of manufacturing capacitor structures and methods of manufacturing semiconductor devices using the same

In a thinner composition and a method of forming a photosensitive film, the thinner composition includes about 50 to about 90% by weight of propylene glycol monomethyl ether acetate, about 1 to about 20% by weight of propylene glycol monomethyl ether, about 1 to about 10% by weight of &#x3b3;-butyrolactone, and about 1 to about 20% by weight of n-butyl acetate. The thinner composition may have a proper volatility and an improved ability to dissolve various types of photosensitive materials, and thus the thinner composition may be usefully employed in an edge bead rinse process, a rework process or a pre-wetting process.

Methods of forming a photosensitive film

A semiconductor device, and a method of forming the same, includes forming a cell bit line pattern and a peripheral gate pattern on a semiconductor substrate. The cell bit line pattern may be formed on an inactive region adjacent to a cell active region of the semiconductor substrate. The peripheral gate pattern may be disposed on a peripheral active region of the semiconductor substrate. A cell contact plug may be formed between the cell bit line pattern and the cell active region. A peripheral contact plug may be formed on the peripheral active region on a side of the peripheral gate pattern. An insulating layer may be formed to expose top surfaces of the cell bit line pattern, the peripheral gate pattern, and the cell and peripheral contact plugs at substantially the same level.

Semiconductor device and method of forming the same

Semiconductor device having reduced thickness, electronic product employing the same, and methods of fabricating the same

A semiconductor integrated circuit includes a semiconductor substrate, a plurality of trenches formed to extend in one direction in the semiconductor substrate, at least one connecting trench connecting at least two of the plurality of trenches to each other, a plurality of trench transistors including a plurality of gate electrodes, each gate electrode partially filling a corresponding trench, and a capping layer filling the at least one connecting trench.

Semiconductor integrated circuit and method of manufacturing the same

Methods of manufacturing a semiconductor device having an RCAT are provided. The method includes forming a first recess having a first depth formed in an active region of a semiconductor substrate, and a second recess having a second depth that is less than the first depth formed in an isolation layer. The depth of the second recess is decreased by removing the isolation layer from the upper surface of the isolation layer by a desired thickness. A gate dielectric layer is formed on an inner wall of the first recess and a gate is formed on the gate dielectric layer.

Methods of manufacturing semiconductor device having recess channel array transistor

A method of forming a fine pattern of a semiconductor device uses a double patterning technique. A first mask pattern is formed on a first hard mask layer disposed on a substrate. A conformal buffer layer is formed over the first mask pattern. A second mask pattern is formed such that segments of the buffer layer are interposed between the first and second mask patterns, and each topographical feature of the second mask pattern is disposed between two adjacent ones of each respective pair of topographical features of the first mask pattern. A first hard mask pattern is formed by etching the first hard mask layer using the first mask pattern, the second mask pattern, and/or the buffer layer as an etch mask. A trench is formed by etching the substrate using the first hard mask pattern as an etch mask. An isolation layer, of a material that is different from that of first hard mask pattern, is formed in the trench.

Method of forming a fine pattern of a semiconductor device using a double patterning technique

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Hwaseong-si, South Korea

Yong-il Kim