Seoul Viosys Co., Ltd.

Yong Hyun Baek

Ji Hun Kang

Chae Hon Kim

Ji Hoon Park

Dae Hong Min

So Ra Lee

Jung Whan Jung

Woo Chul Kwak

Sam Seok Jang

Jin Woo Huh

Woo Cheol Gwak

Jun Ho Yoon

Seung Kyu Choi

Hyo Shik Choi

Kyung Hae Kim

Su Youn Hong

Mi Gyeong Jeong

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer, a p-type nitride semiconductor layer disposed on the active layer and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and disposed near the active layer. The sub-emission layer may emit light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light emitting diode is within a range of 0.205≤X≤0.495 and 0.265≤Y≤0.450 in CIE color coordinates (X, Y).

Single chip multi band light emitting diode, light emitting device and light emitting module having the same

A multi-band light emitting diode is provided. The multi-band light emitting diode includes a first conductivity type semiconductor layer, a V-pit generation layer disposed on the first conductivity type semiconductor layer and having a first V-pit of a first inlet width, a stress relief layer disposed on the V-pit generation layer and providing a second V-pit of a second inlet width greater than the first inlet width of the V-pit on the first V-pit, an active layer disposed on the stress relief layer and including a first active layer region formed on a flat surface of the stress relief layer and a second active layer region formed in the second V-pit, and a second conductivity type semiconductor layer disposed on the active layer.

Light emitting diode

A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

Single chip multi band LED and application thereof

A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.

Light emitting device and manufacturing method thereof

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The active layer emits light having at least two peak wavelengths at a single chip level.

Single chip multi band LED

A light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The active layer has a single structure of a multi-quantum well in which a plurality of barrier layers and a plurality of well layers are stacked, and the active layer emits white light.

Single chip multi band led and application thereof

Light emitting device having a substrate with a pattern of protrusions and manufacturing method thereof

A method of fabricating a light emitting device includes (i) determining whether each measurement location is defective or not based on a measurement result of the emission wavelength of each location, (ii) forming a test stacked structure by combining one of the first wafers, one of the second wafers, and one of the third wafers in a set of wafers, and (iii) calculating a combination yield of the test stacked structure based on a count of defective measurement locations that overlap in the test stacked structure.

Method of fabricating a light emitting device having a stacked structure

A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on an driving current.

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level.

A light emitting device is provided to include an n-type semiconductor layer, a p-type semiconductor layer, an active layer, and an electron blocking layer disposed between the p-type semiconductor layer and the active layer. The p-type semiconductor layer includes a hole injection layer, a p-type contact layer, and a hole transport layer. The hole transport layer includes a plurality of undoped layers and at least one intermediate doped layer disposed between the undoped layers. At least one of the undoped layers includes a zone in which hole concentration decreases with increasing distance from the hole injection layer or the p-type contact layer, and the intermediate doped layer is disposed to be at least partially overlapped with a region of the hole transport layer, the region having the hole concentration of 62% to 87% of the hole concentration of the p-type contact layer.

Light emitting device and method of fabricating the same

Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes: a first conductive type semiconductor layer including a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; a V-pit passing through at least one portion of the first upper conductive type semiconductor layer; a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pit; and an active layer interposed between the first and second conductive type semiconductor layers with the V-pit passing through the active layer. The first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and includes a V-pit generation layer comprising a starting point of the V-pit. The semiconductor device includes the V-pits having a large size and a high density to efficiently preventing damage to the semiconductor device due to electrostatic discharge.

Growing community of inventors

Gyeonggi-do, South Korea

Yong Hyun Baek