Samsung Electronics Co., Ltd.

Yong-Hyeon Kim

Se-Jin Ahn

Seong-Hyun Kim

Sung-up Choi

Yong-Kyeong Kim

Tae-keun Jeon

Jung-hoon Kim

Chang-Eun Choi

Jong-hwan Lee

Sung-Up Choi

Hee-Tak Shin

Kyoung-Ryun Bae

Methods and memory systems are provided that can detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.

Memory system that detects bit errors due to read disturbance and methods thereof

A memory card system and related write method are disclosed. The method includes receiving a write request for a predetermined page; performing a write operation on a first log block that corresponds to a first data block including the page; receiving an update request for the page; and performing a write operation on a second log block that corresponds to the first data block. The memory card system includes: at least one non-volatile memory including a data block and a log block for updating the data block; and a memory controller controlling an operation of the non-volatile memory. During a write operation for a predetermined page, the controller controls writing of a first log block corresponding to a first data block including the predetermined page, and controls writing of a second log block during an update operation of the predetermined page.

Write and merge methods in memory card systems for reducing the number of page copies

Provided is a memory card device. The memory card device includes a flash memory and a controller. The flash memory includes a boot area storing boot data, and a user area storing user data. The controller accesses the boot area or the user area according to an external command. Boot data can be stored in a memory card integrated in an electronic device. Also, when a host requests an access to boot data/user data stored in the memory card, the boot data/user data can be accessed under control of the controller.

Memory card, memory system including the same, and operating method thereof

Methods and memory systems are provided that detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.

A movable storage device combined with a smart card can include a plurality of signal pins that are connected to at least one of a plurality of memory card hosts that use different communications protocols from each other or a smart card host, and at least one signal pin that is used as a mode distinguishing pin. A mode deciding unit can decide on an operation mode, which can be a smart card mode and/or a memory card mode based on a level of a first initial input signal received from the mode distinguishing pin. A smart card module can communicate with a smart card host in a smart card mode and a memory card module can be interfaced with memory card hosts, and communicates with a memory card host connected in a memory card mode and stores data.

Multi-standard protocol storage devices

A multi-standard protocol storage device can include a non-volatile memory, a first interface controller, a second interface controller, and at least one pin. The non-volatile memory can be accessed according to a non-volatile memory protocol. The first interface controller can be configured to convert first commands in a first standardized protocol to the non-volatile memory protocol and the second interface controller can be configured to convert second commands in a second standardized protocol to the non-volatile memory protocol. The at least one pin of the device is configured to conduct a recognition signal thereon indicating whether the first or second standardized protocol is used by a host coupled thereto and that conducts data signals according to the first and second standardized protocols.

Growing community of inventors

Yongin-si, South Korea

Yong-Hyeon Kim