Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Samsung Displayco., Ltd.

Yong-Hwan Ryu

Shin Il Choi

Hong Sick Park

Jungha Son

Jae-Seung Hwang

Sung-Un Kwon

Jaeneung Kim

Jun Hyuk Seo

Jung Ha Son

Dae Ho Kim

Eun-Young Kang

Sun-Jin Song

Jihun Kim

Sang-Hoon Lee

Yu-Gwang Jeong

Hong-Sick Park

Sang Gab Kim

Jong-Hyun Choung

Bong-Kyun Kim

Jang-Eun Lee

Joo Hyung Lee

Wang Woo Lee

Shin-Il Choi

Young Dae Kim

Woo-Jin Kim

Yun Jong Yeo

Seung-Won Park

Yunjong Yeo

Eunjung Kim

Sangkyu Choi

Jae Neung Kim

Woo Jin Cho

Jung-Ha Son

Daehwan Jang

Eui Kang Heo

Hee-Ju Shin

Sang Jin Park

Hyungbin Cho

Hee Na Kim

Jun-ho Jeong

Hanyung Jung

Jae Uoon Kim

Hyunju Kang

Tae Hyeok Choi

Hyun Duck Cho

Kyoung-Ha Eom

Sung-Young Choi

Jiae Kim

Yunji Nam

Baehyoun Jung

In-Ja Han

Jea-Neung Kim

A method of manufacturing a display device in a chamber in which a material including yttrium is coated on an inner surface includes: forming a first layer pattern by dry etching on a substrate; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing a second layer pattern by using the photoresist pattern as an etch mask; and performing an additional acid etching process by using an etching solution including at least one of hydrochloric acid, sulfuric acid, or nitric acid before the forming of the photoresist pattern on the second layer material after the dry etching to form the first layer pattern.

Manufacturing method of display device

A particle collection device includes a collection sheet and a frame on which the collection sheet is mounted. The collection sheet includes a base sheet, a magnetic substance, and a metal protrusion disposed on the base sheet to be adjacent to the magnetic substance.

Particle collection device and mask cleaning device having the same

A display device includes a peripheral area around a display area, a display element in the display area, and a dam in the peripheral area. A thin film encapsulation layer covers the dam and the display element. A touch sensor is on the thin film encapsulation layer. A first insulating layer is between the thin film encapsulation layer and the touch sensor and has a first region and a second region. A dielectric constant of the first region is lower than a dielectric constant of the second region, and the first region is between the dam and the touch sensor.

Display device including touch sensor and manufacturing method thereof

A method of manufacturing a roll type imprint master mold including disposing a base layer on a substrate including a first area and a second area adjacent to the first area, disposing an inorganic insulation layer on the base layer, forming a first mask pattern and a first resin pattern in the first area, forming a pattern layer by etching the inorganic insulation layer using the first resin and the first mask patterns as a mask, removing the first resin and the first mask patterns, forming a second mask pattern and a second resin pattern in the second area, forming a pattern layer by etching the inorganic insulation layer using the second resin and the second mask patterns as a mask, removing the second resin and the second mask patterns, separating the base layer from the substrate, and attaching the base layer onto a roll body.

Roll type imprint master mold, method of manufacturing the same, and imprint method using the same

A flexible touch sensing unit may include a substrate including an active touch region and an inactive region surrounding the active touch region, a plurality of first sensing electrodes disposed on the active touch region and extending along a first direction, a plurality of second sensing electrodes disposed on the active touch region and extending along a second direction, and a plurality of sensing lines disposed on the inactive region and electrically connected to the first sensing electrodes and the second sensing electrodes. Each of the sensing lines may include a first metal layer, a first conductive layer disposed on the first metal layer, and a second metal layer disposed on the first conductive layer. Each of the first sensing electrodes may include a third metal layer, and each of the second sensing electrodes may include a fourth metal layer. The first conductive layer may include a self-assembled monolayer.

Flexible touch sensing unit and method of manufacturing a flexible touch sensing unit

A display device including a display panel configured to display an image and having a folding area by which the display panel is configured to be folded along a folding axis, and a touch member disposed on the display panel and configured to detect an external touch signal. The touch member includes a plurality of first conductive patterns disposed to overlap the folding area, in which each of the first conductive patterns includes a fiber layer including a plurality of nanofibers, and the nanofibers includes a plurality of cavities.

Display device and method for manufacturing same

A flexible electronic device including a substrate and a line layer disposed on the substrate. The line layer includes a first conductive layer disposed on the substrate, a plurality of polymer walls disposed on the first conductive layer and spaced apart from each other in a horizontal direction parallel to the substrate, and a second conductive layer including first portions disposed between the polymer walls and a second portion disposed on the polymer walls. A portion of the first conductive layer contacts the first portions.

Flexible electronic device and method of manufacturing the same

Provided is a touch member includes a folding region folded around a folding axis and a non-folding region adjacent to the folding region. The touch member includes a first conductive pattern disposed in the folding region and a second conductive pattern disposed in the non-folding region. The touch member also includes an air gap defined inside the first conductive pattern. The touch member is configured to detect an external signal.

Touch member and method of manufacturing the same

A touch sensor includes a touch substrate including a touch sensing area and a non-sensing area outside the touch sensing area, touch electrodes disposed in the touch sensing area and configured to sense a touch, and touch wiring connected to the touch electrodes in the non-sensing area, in which the touch wiring includes a first wiring conductive layer, a second wiring conductive layer disposed on the first wiring conductive layer, and transparent layers disposed at first and second sides of the second wiring conductive layer and on the first wiring conductive layer.

Touch sensor and method of manufacturing the same

A liquid crystal display is provided. The liquid crystal display includes a substrate, a thin film transistor disposed on the substrate, a pixel electrode connected with a terminal of the thin film transistor, a microcavity disposed on the pixel electrode, the microcavity including a liquid crystal injection hole disposed at an edge of the microcavity, a supporting member disposed on the microcavity, a first hydrophobic layer disposed on an edge portion of the supporting member, and a capping layer disposed on the supporting member with the capping layer covering the liquid crystal injection hole.

Liquid crystal display and manufacturing method thereof

A method of forming a thin film transistor array panel includes: forming a first insulating layer on a substrate; forming an amorphous carbon layer on the first insulating layer; forming a second insulating layer on the amorphous carbon layer; forming an opening in the amorphous carbon layer by patterning the second insulating layer and the amorphous carbon layer; and forming a trench in the first insulating layer by etching the first insulating layer, the etching the first insulating layer using the amorphous carbon layer including the opening as a mask.

Trench forming method, metal wiring forming method, and method of manufacturing thin film transistor array panel

The present invention relates to a method for forming a trench that can remove residual particles in a trench using a metal mask, a method for forming a metal wire, and a method for manufacturing a thin film transistor array panel. The method for forming a trench includes: forming a first insulating layer on a substrate; forming a first metal layer on the first insulating layer; forming an opening by patterning the first metal layer; forming a trench by dry-etching the first insulating layer using the patterned first metal layer as a mask; and wet-etching the substrate. The dry-etching is performed using a main etching gas and a first auxiliary etching gas, and the first auxiliary etching gas includes argon.

Thin film transistor and method of manufacturing trench, metal wire, and thin film transistor array panel

A display substrate includes a metal pattern, a first insulation layer pattern and a second insulation layer pattern. The metal pattern is on a base substrate. The first insulation pattern is on the metal pattern and includes one of a silicon nitride (SiN) and a silicon oxide (SiO). The second insulation pattern is on the first insulation pattern and includes a remaining one of the silicon nitride (SiN) and the silicon oxide (SiO).

Display substrate and method of manufacturing the same

A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns.

Method of fabricating semiconductor device

An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process.

Methods of forming pattern structures

Growing community of inventors

Yongin-si, South Korea

Yong-Hwan Ryu