Samsung Electronics Co., Ltd.

Yong-Hwan Noh

Chul-Sung Park

Hyang-Ja Yang

Kyo-Min Sohn

Byong-Kwon Lee

Young-Ho Suh

Seung-Min Lee

Kook-Hwan Kwon

Hong-Kyun Kim

Disclosed is a semiconductor integrated circuit device which includes a test element group circuit connected between a first and a second pad. The test element group circuit includes a plurality of semiconductor devices connected in series between the first and second pads. At least two adjacent ones of the semiconductor devices are connected to each other via a signal path that is formed by a multi-layer interconnection structure.

Semiconductor integrated circuit device with test element group circuit

A semiconductor memory device which includes an internal voltage generator circuit for adjusting an external power supply voltage and generating first and second internal power supply voltages. The first internal power supply voltage is supplied to a memory cell array via a first power supply line, and the second internal power supply voltage is supplied to a peripheral circuit via a second power supply line. A control circuit controls the internal voltage generator circuit so that the levels of the first and second internal power supply voltages vary depending on a mode of operation.

Semiconductor memory device with internal voltage generators for testing a memory array and peripheral circuits

An integrated circuit device includes a pin for receiving a DC voltage component signal. The device includes a signal source for applying an AC signal to the pin, a buffer for converting the AC signal into a digital signal, and a digital detector for detecting a frequency of the digital signal and outputting a predetermined detection signal. The predetermined detection signal is activated when the frequency of the digital signal is greater than or equal to a predetermined frequency. The predetermined detection signal is used as a signal for setting predetermined functional modes. The device further includes registers or a differential amplifier and a decoder for generating a plurality of functional mode signals.

Semiconductor integrated circuit comprising functional modes

Methods and apparatus for performing read and write operations in a semiconductor memory device comprising an I/O (input/output) architecture comprising a separate data input bus and data output bus. Read and write operations are sequentially performed in a same cycle using QDR2 (Quadruple Data Rate 2) wherein each of the input and output modes operate at a 2-bit burst mode and a double data rate (DDR) mode, thereby minimizing cycle time or read and write operations are sequentially performed in a same cycle using QDR4 (Quadruple Data Rate 4), wherein each of the input and output modes operate at a 4-bit burst mode and a DDR mode, thereby minimizing the cycle time. In another aspect, when a read command is input in one cycle, a read operation is performed in synchronization with a rising edge of clock and a write operation is performed in synchronization with a signal that operates during the read operation.

Method and apparatus for read operation and write operation in semiconductor memory device

The present invention relates to a semiconductor memory device capable of performing a write operation 1 or 2 cycles after receiving a write command without necessitating a dead cycle. The elimination of the dead cycle between read and write operations improves bus efficiency and thus, speed. The memory device of the present invention includes an address input control means for receiving an external write or read address and delaying the write address by either 1 or 2 cycles. A data input control means receives external write data and delays the write data by a first or second predetermined number of cycles according to the write mode. A data transmission control means transmits the delayed write data responsive to a predetermined set of input commands. The data input control means reads the data from a cell corresponding to the read address, provides the write data to a cell corresponding to the write address, and writes the transmitted delayed data into the cell corresponding to the write address.

Semiconductor memory device capable of performing a write operation 1 or 2 cycles after receiving a write command without a dead cycle

Disclosed is a semiconductor memory device comprising a pipeline structure having a sense amplifier responsive to a first enable signal; a data register responsive to a second enable signal for latching an output of said sense amplifier between said sense amplifier and a common data line; and a monitoring part to monitor said first and second enable signals and adapted to prevent overlapping between an enabling interval of said first enable signal and said second enable signal.

Synchronous semiconductor memory device and method for operating same

A synchronous semiconductor memory device includes a plurality of main data lines each coupled between a block sense amplifier array and a data output buffer. Each main data line prefetches a plurality of cell data segments from memory cells corresponding to an input/output port and transmits the cell data to the data output buffer. The memory device also includes a pass/latch part connected to one or more corresponding block sense amplifiers within a corresponding block sense amplifier array. The pass/latch part receives a plurality of cell data segments in parallel from the block sense amplifiers and transmits them in series to a corresponding main data line. This invention reduces a chip size and peak electric current of the semiconductor device by minimizing the number of main data lines required for prefetch operations.

Semiconductor memory device having prefetch operation mode and data transfer method for reducing the number of main data lines

An internal clock generating circuit of a synchronous type semiconductor memory device includes a transmission part for transmitting a first clock enable signal in response to applying a first level of a first clock signal. It also includes a latch part for latching the first clock enable signal transmitted from the transmission part. A gating part gates the latched first clock enable signal with the first clock signal to generate a second clock signal as an internal clock signal for the memory device. This reduces a time lag by which the speed of the internal clock is synchronized with the external clock signal.

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Suwon-shi, South Korea

Yong-Hwan Noh