Taiwan Semiconductor Manufacturing Comp. Ltd.

Yong-Hung Yang

Ding-I Liu

Si-Wen Liao

Po-Hsiung Leu

Lan-Hai Wang

Mao-Cheng Lin

Chia-Ming Tai

Lan Hai Wang

Jia-Wei Hsu

A coating apparatus for forming a coating film over a substrate includes a spin chuck for holding and rotating the substrate, a central coating nozzle over a central portion of the substrate, a plurality of first coating nozzles surrounding the central coating nozzle and spaced apart from the central coating nozzle by substantially a same first distance, and a plurality of second coating nozzles surrounding the central coating nozzle and spaced apart from the central coating nozzle by substantially a same second distance, wherein the second distance is greater than the first distance.

Coating apparatus and method of forming coating film

An apparatus comprises a first gas inlet coupled between a first pipe and a reaction chamber, wherein the first pipe configured to carry process gases, a second gas inlet coupled between a second pipe and the reaction chamber, wherein the second pipe configured to carry a precursor material in a gaseous state and a heating device coupled to the second pipe and the second gas inlet, wherein the heating device keeps an ambient temperature of the second pipe and the second gas inlet above a boiling point of the precursor material.

Apparatus for dielectric deposition process

A method of forming a coating film over a substrate is provided. The method includes spinning the substrate. The method further includes providing a central coating liquid spray over a central portion of the substrate. The method also includes providing first coating liquid sprays over the substrate. The first coating liquid sprays surround the central coating liquid spray and are spaced apart from the central coating liquid spray by a same first distance.

A production tool includes a chamber, a heater in the chamber, and a pumping outlet on a side of the heater. A pumping liner is in the chamber and encircling the heater. The pumping liner and the heater have a first gap therebetween and a second gap therebetween. The second gap is different from the first gap, and the second gap is farther away from the first pumping outlet than the first gap.

Asymmetrical chamber configuration

A multi chamber thin film deposition apparatus and a method for depositing films, is provided. Each chamber includes a three dimensional gas delivery system including process gases being delivered downwardly toward the substrate and laterally toward the substrate. A pumping system includes an exhaust port in each chamber that is centrally positioned underneath the substrate being processed and therefore the gas flow around all portions of the edge of the substrate are equally spaced from the exhaust port thereby creating a uniform gas flow profile which results in film thickness uniformity of films deposited on both the front and back surfaces of the substrate. The deposited films demonstrate uniform thickness on the front and back of the substrate and extend inwardly to a uniform distance on the periphery of the backside of the substrate.

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Hsinchu, Taiwan

Yong-Hung Yang