Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Yonsei University

Yong Hoon Son

Min Hyuck Kang

Bong-Yeon Kim

Hyun-Joo Lee

Jin-Ho Ju

Hyunjoo Lee

Jinho Ju

Han Vit Yang

Bong Yeon Kim

Hyang-Shik Kong

Siyoung Choi

Junhyuk Woo

Dongeon Lee

Byeong Chan Lee

Hyuk Ho Kwon

Taek Jung Kim

So Yoon Lee

Sung Soo Ahn

Dong-Eon Lee

Kyoung-Sik Kim

Seung-Hwa Baek

In Soo Jung

Moon Jong Kang

Deok Hyung Lee

Dong Ho Kim

Hyun Joo Lee

Jin Ho Ju

Sang-uk Lim

Kyung Hyun Kim

Jong Wook Lee

Phil Ouk Nam

Jae Young Park

Myounggeun Cha

Yoon Jae Kim

Min Jung Kang

Jun-Hyuk Woo

Sung Jin Choi

Jin Il Lee

Jee Hoon Han

Kwang Chul Park

Seok Woo Nam

Yu Gyun Shin

Won Bong Jung

Bongyeon Kim

Byeong Ju Kim

Yi Seul Song

Jin Ho Oh

Jong Heun Lim

Yeon Sil Sohn

Bong Jun Park

Cha Dong Yeo

A three-dimensional semiconductor device includes: a peripheral circuit structure disposed on a lower substrate, and including an internal peripheral pad portion; an upper substrate disposed on the peripheral circuit structure; a stack structure disposed on the upper substrate, and including gate horizontal patterns; a vertical channel structure passing through the stack structure in a first region on the upper substrate; a first vertical support structure passing through the stack structure in a second region on the upper substrate; and an internal peripheral contact structure passing through the stack structure and the upper substrate, and electrically connected to the internal peripheral pad portion, wherein an upper surface of the first vertical support structure is disposed on a different level from an upper surface of the vertical channel structure, and is coplanar with an upper surface of the internal peripheral contact structure.

Three-dimensional semiconductor device

A memory device includes a substrate having a first source film thereon and an upper stacked structure on the first source film. An electrically conductive channel structure is provided, which extends through the upper stacked structure and the first source film. The channel structure includes a channel pattern, which extends vertically through the upper stacked structure and the first source film, and an information storage pattern on a sidewall of the channel pattern. A second source film is provided, which extends between the first source film and a surface of the substrate. The second source film, which contacts the channel pattern, includes an upward extending protrusion, which extends underneath the information storage pattern. A channel protective film is provided, which extends between at least a portion of the protrusion and at least a portion of the information storage pattern.

Memory devices having vertically extending channel structures therein

A mask for photolithography includes: a transparent substrate; a phase shift pattern on the transparent substrate and configured to change a phase of light; a dielectric layer on the transparent substrate; and a negative refractive-index meta material layer on the dielectric layer.

Mask for photolithography, method of manufacturing the same and method of manufacturing substrate using the same

A semiconductor device includes a stacked structure disposed on a semiconductor substrate. The stacked structure includes interlayer insulating layers and gate electrodes, alternately stacked. Separation patterns are disposed to penetrate the stacked structure. A channel structure is disposed between the separation patterns. The channel structure includes a horizontal portion interposed between the stacked structure and the semiconductor substrate while being in contact with the semiconductor substrate and includes vertical portions extending from the horizontal portion in a vertical direction and penetrating the stacked structure. A lower structure is interposed between the horizontal portion and the separation patterns. A dielectric structure is interposed between the vertical portions and the stacked structure and extends between the horizontal portion and the stacked structure.

Semiconductor device including channel structure

A method of forming a pattern includes: preparing a target substrate including a photoresist layer on a base substrate; aligning a phase shift mask to the target substrate, the phase shift mask including a mask substrate comparted into a first region including a first sub region and second sub regions at sides of the first sub region, and second regions at sides of the first region, the phase shift mask including a phase shift layer on the mask substrate corresponding to the first region; fully exposing the photoresist layer at the first sub region and the second regions by utilizing the phase shift mask; and removing the photoresist layer at the first sub region and the second regions to form first and second photoresist patterns corresponding to the second sub regions. Transmittance of the phase shift layer is selected to fully expose the photoresist layer in the first sub region.

Phase shift mask and method of forming patterns using the same

A memory device, including a first memory region including a first substrate, a plurality of first semiconductor devices on the first substrate, and a first interlayer insulating layer covering the plurality of first semiconductor devices; and a second memory region including a second substrate on the first interlayer insulating layer and a plurality of second semiconductor devices on the second substrate, the second substrate including a first region in a plurality of grooves in the first interlayer insulating layer and a second region including grains extending from the first region, the second region being on an upper surface of the first interlayer insulating layer.

Memory device and method of manufacturing the same

A phase shift mask enables much smaller scale of electronic circuit pattern. A phase shift mask comprises a transparent substrate, a phase shift pattern arranged on the transparent substrate to change a phase of light that penetrates the transparent substrate, and a metal coating layer arranged on at least a part of a surface of the phase shift pattern.

Phase shift mask, method for manufacturing the same, and method for forming micro pattern

A mask includes a transparent substrate and a light blocking pattern. The light blocking pattern includes a light blocking part and a diffraction pattern. The light blocking part is disposed on the transparent substrate and is configured to block light. The diffraction pattern includes a plurality of protrusion parts and is configured to diffract the light. The plurality of protrusion parts protrudes from a side of the blocking part and is separated from each other.

Mask, method of manufacturing the same, and method of manufacturing a display panel using the same

A method for forming a fine pattern includes forming an etching target material layer on a substrate, forming a first photoresist layer on the etching target material layer, forming a metal pattern on the first photoresist layer, the metal pattern having a plurality of lines and thin film lines alternately arranged, the lines having predetermined linewidth and thickness and are spaced apart from each other by a predetermined distance, exciting surface plasmons in the metal pattern by light irradiation to produce a surface plasmon resonance that exposes a fine first pattern shape in the first photoresist layer, forming a first photoresist pattern by removing the metal pattern and developing the first photoresist layer, and etching the etching target material layer by using the first photoresist pattern as a mask.

Patterning method using surface plasmon

A display device in a display panel; a backlight unit configured to provide light to the display panel, the display pan& being arranged at a side of a first surface of the backlight unit; and a first light adjustment unit configured to be arranged at a side of a second surface of the backlight unit opposite to the first surface of the backlight unit, the first light adjustment unit including a plurality of reflection portions, reflection portions of the plurality of reflection portions being rotatable so as to be switchable between a light transmission mode and a light reflection mode.

Display device

Provided is a method of manufacturing a display apparatus, the method including forming an amorphous silicon layer on a substrate; changing amorphous silicon in the amorphous silicon layer into crystalline silicon by irradiating the amorphous silicon with a laser beam emitted through a phase shift mask; and forming a display device, the phase shift mask including a base substrate; a barrier layer on the base substrate and including a plurality of transmissive portions which are spaced apart from each other in a first direction; and phase shift portions which alternately fill the plurality of transmissive portions in the first direction.

Phase shift mask and method of manufacturing display apparatus using the same

A phase shift device includes a phase shift mask which includes a transparent substrate, and a phase shift pattern which is provided on the transparent substrate, and includes a first area having a first thickness, a second area having a second thickness which is less than the first thickness, a first opening having a first opening width and defined at the first area, and a second opening having a second opening width and defined at the second area.

Phase shift mask, patterning method using the same and method of manufacturing display panel using the same

Growing community of inventors

Yongin-si, South Korea

Yong Hoon Son