Samsung Electronics Co., Ltd.

Yong-Hoan Kim

Mi-Hyun Kang

Seong-Young Ryu

Kyoungmok Son

Eun-Jeong Park

Meung-Ryul Lee

A negative-level shifting circuit includes a first level shifter including an input circuit configured to receive a logic signal having a first voltage level and a load circuit configured to generate a first output signal having a second voltage level based on a voltage generated by the input circuit, and a second level shifter configured to receive the first output signal from the first level shifter and generate a second output signal having a third voltage level. The first level shifter further includes a shielding circuit connected between the input circuit and the load circuit and configured to separate an operating voltage region of the input circuit from an operating voltage region of the load circuit such that the input circuit operates in a positive voltage region and the load circuit operates in a negative voltage region.

Negative-level shifting circuit and a source driver and a display device using the circuit

Integrated circuit devices and electrostatic discharge (ESD) protection circuits thereof. An integrated circuit device may include an input/output pad, an internal circuit, and a transistor connected between the input/output pad and the internal circuit configured to perform a switch operation between the input/output pad and the internal circuit in response to a control signal transmitted from the internal circuit, and operate as an ESD protection circuit.

Integrated circuit device and electrostatic discharge protecting circuit thereof

A semiconductor integrated circuit device includes a first dopant region in a semiconductor substrate, an isolation region on the semiconductor substrate, the isolation region surrounding the first dopant region, a gate wire surrounding at least a portion of the isolation region, and a plurality of second dopant regions arranged along at least a portion of the gate wire, the plurality of second dopant regions being spaced apart from each other, and the portion of the gate wire being between the first dopant region and a respective second dopant region.

Growing community of inventors

Suwon-si, South Korea

Yong-Hoan Kim