University of Michigan

Yong-Ho Ra

Zetian Mi

Renjie Wang

Thomas Szkopek

Xianhe Liu

Roksana Tonny Rashid

Sharif Sadaf

InGaN/GaN quantum layer nanowire light emitting diodes are fabricated into a single cluster capable of exhibiting a wide spectral output range. The nanowires having InGaN/GaN quantum layers formed of quantum dots are tuned to different output wavelengths using different nanowire diameters, for example, to achieve a full spectral output range covering the entire visible spectrum for display applications. The entire cluster is formed using a monolithically integrated fabrication technique that employs a single-step selective area epitaxy growth.

Monolithically integrated InGaN/GaN quantum nanowire devices

A nanowire can include a first semiconductor portion, a second portion including a quantum structure disposed on the first portion, and a second semiconductor portion disposed on the second portion opposite the first portion. The quantum structure can include one or more quantum core structures and a quantum core shell disposed about the one or more quantum core structures. The one or more quantum core structures can include one or more quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.

Core-shell InGaN/AlGaN quantum nanowire photonic structures

Semiconductor light emitting diodes (LEDs) formed as (Al)GaN-based nanowire structures have a first semiconductor layer, a second semiconductor layer, and a thin metallic layer fabricated therebetween. The structures, operating in the deep ultraviolet (UV) spectral range, exhibit high photoluminescence efficiency at room temperature. The structures may be formed of an epitaxial metal tunnel junction operating as a reflector that enhances carrier transport to and from the semiconductor alloy layers, capable of producing external quantum efficiencies at least one order of magnitude higher than convention devices.

Growing community of inventors

Montreal, Canada

Yong-Ho Ra