Samsung Electronics Co., Ltd.

Yong-hee Kim

Jin-Woo Kim

Chul-soon Kwon

Joo-chan Kim

Eui-Youl Ryu

Dai-geun Kim

Jae-Hyun Park

Sang-Wook Park

Jae-Min Yu

Don-Woo Lee

Kook-Min Kim

Dae-geun Kim

Eui-youl Ryu

A flash memory device having a split gate that can prevent an active region and a floating gate electrode from being misaligned, and a method of manufacturing the same, includes sequentially stacking a gate oxide layer and a floating gate conductive layer on a semiconductor substrate, forming an isolation layer in a predetermined region of the semiconductor substrate where the floating gate conductive layer is formed, and defining an active region. Then, a local oxide layer is formed by oxidizing a predetermined part of the floating gate conductive layer on the active region. A floating gate electrode structure is formed by patterning the floating gate conductive layer using the local oxide layer.

Flash memory device having a split gate

A semiconductor device having a measuring pattern that enhances measuring reliability and a method of measuring the semiconductor device using the measuring pattern. The semiconductor device includes a semiconductor substrate having a chip area in which an integrated circuit is formed, and a scribe area surrounding the chip area. The semiconductor device also includes a measuring pattern formed in the scribe area and having a surface sectional area to include a beam area in which measuring beams are projected, and a dummy pattern formed in the measuring pattern to reduce the surface sectional area of the measuring pattern. The surface sectional area of the dummy pattern occupies from approximately 5% to approximately 15% of a surface sectional area of the beam area.

Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring pattern

Flash memory device having a split gate and method of manufacturing the same

A method of manufacturing split-gate memory provides a control gate insulating film and the tunneling insulating film in a cell region, a high voltage gate insulating film in a high voltage region, and a low voltage gate insulating film in a low voltage region, all having different thickness. Additionally, a pre-cleaning process removes an outer sidewall portion of a spacer to form a tip portion of a floating gate that overlaps a control gate line formed proximate the floating gate.

Method of manufacturing split-gate memory

In a method and arrangement for controlling a monitor, a video signal is transmitted from a computer to the monitor and is sampled to digitize it and obtain a corresponding signal. Control of the monitor is achieved according to the corresponding signal. A computer program is executed to select a function for controlling the monitor, and a control signal is output through a video card of the computer. Then, color signals transmitted from the computer are sampled to analyze a control function and carry it out. Accordingly, the monitor can be controlled using software, even in a system which does not use a separate cable or does not employ a USB device. The number of control keys set on the monitor can be reduced, and a user is permitted to control various functions. The product cost of the monitor is decreased, and design of the front of the monitor is simplified.

Method and apparatus for controlling monitor using video signal

Growing community of inventors

Suwon-si, South Korea

Yong-hee Kim