Korea Advanced Institute of Science and Technology

Korea Institute of Science and Technology

Yong-Hee Han

Sung Wook Moon

Hyun-Joon Shin

The present invention relates to uncooled infrared detector with infrared absorption structure in which the supporting layer, detection layer, protecting layer, and dielectric layer construct &#x3bb;/4 resonating absorbtion structure as a single body. In order to enhance the characteristic of uncooled infrared detector, it is essential for the infrared absorption layer to absorb incident infrared with high efficiency. The present invention is characterized in that the infrared detector with unified absorption layer includes an infrared detection film, a device protecting layer, a supporting layer for thermally isolated structure, and a dielectric layer, etc. in its absorption structure. Due to this characteristic, highly efficient infrared absorption is possible with much less thermal mass than the absorption layer for the structure of existing metal/dielectric/metal structure and regardless of the distortion of floating structure caused by fabrication fault rather than air cavity &#x3bb;/4 structure.

Infrared absorption layer structure and its formation method, and an uncooled infrared detector using this structure

The present invention relates to an oxide thin film for a bolometer-type uncooled infrared detector having high sensitivity. An amorphous vanadium tungsten oxide (V&#x2014;W&#x2014;O), i.e. a tungsten-doped vanadium oxide, is provided as an oxide film for a bolometer application. An oxide for bolometer having characteristics of low resistance of 5 to 200 k &#x3a9; and variable TCR between &#x2212;1.5 and &#x2212;4.1%/&#xb0; C. can be obtained by an oxidation of vanadium-tungsten metal film at a low temperature around 300&#xb0; C., with changing a tungsten content and oxidation time. And a reproducible thin film can be fabricated by low price equipment for thin film deposition, without expensive ion beam or laser apparatus. Accordingly, an oxide for bolometer having characteristics of resistance lower than 100 k&#x3a9; and TCR higher than &#x2212;3%/&#xb0; C. can be obtained with reproducibility, whereby an uncooled-type infrared detector having high sensitivity can be fabricated.

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Seoul, South Korea

Yong-Hee Han