Samsung Electronics Co., Ltd.

Yong-hee Cho

Jooho Lee

Yongsung Kim

Changsoo Lee

Jinhong Kim

Jaeho Lee

Hyungjun Kim

Haeryong Kim

Younsoo Kim

Jeonggyu Song

Euncheol Do

Hyangsook Lee

Jiwoon Park

Eunha Lee

Eunae Cho

Myung-kyu Kim

Boeun Park

Younggeun Park

Seungwoo Jang

A capacitor includes a lower electrode layer including a first conductive layer and a second conductive layer on the first conductive layer, the second conductive layer including SnOdoped with an impurity; a dielectric layer on the second conductive layer, the dielectric layer including a rutile-phase oxide; and an upper electrode layer on the dielectric layer.

Capacitor, memory device including the capacitor

Provided are a thin film structure, a capacitor including the thin film structure, a semiconductor device including the thin film structure, and a method of manufacturing the thin film structure, in which the thin film structure may include: a first electrode thin film disposed on a substrate and including a first perovskite-based oxide; and a protective film disposed on the first electrode thin film and including a second perovskite-based oxide that is oxygen-deficient and includes a doping element. The thin film structure may prevent the deterioration of conductivity and a crystalline structure of a perovskite-based oxide electrode, which is a lower electrode, even in a high-temperature oxidizing atmosphere for subsequent dielectric film deposition.

Thin film structure including method of manufacturing

A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO, and a leakage current reducing layer including GeOin the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.

Capacitor and electronic device including the same

A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.

Semiconductor device and semiconductor apparatus including the same

A semiconductor device includes a first electrode; a second electrode which is apart from the first electrode; and a dielectric layer between the first electrode and the second electrode. The dielectric layer may include a base material including an oxide of a base metal, the base material having a dielectric constant of about 20 to about 70, and co-dopants including a Group 3 element and a Group 5 element. The Group 3 element may include Sc, Y, B, Al, Ga, In, and/or Tl, and the Group 5 element may include V, Nb, Ta, N, P, As, Sb, and/or Bi.

Head mounted display

A printed circuit board includes a substrate including a surface layer and a first ground layer; a high-frequency signal generation part provided in the surface layer of the substrate; at least one high-frequency signal connector mounting portion formed in the surface layer of the substrate; at least one high-frequency signal line formed in the surface layer of the substrate, and extend from the high-frequency signal generation part to the at least one high-frequency signal connector mounting portion; and at least one high-frequency signal connector disposed in the at least one high-frequency signal connector mounting portion, wherein an end of the first ground layer is exposed to a side surface of the substrate, and when the high-frequency signal connector is disposed in the at least one high-frequency signal connector mounting portion, a ground of the high-frequency signal connector is in contact with the end of the first ground layer.

Printed circuit board having high-speed or high-frequency signal connector

Growing community of inventors

Suwon-si, South Korea

Yong-hee Cho