Samsung Electronics Co., Ltd.

Yong-Gyu Chu

Jun Jin Kong

Dae-Hyun Kim

Ki-Jun Lee

Myung-Kyu Lee

Byung-Chul Kim

Kyu-Chan Lee

Jun-hyung Kim

Myeong-O Kim

Won-Il Bae

Sang-Man Byun

Woo-Pyo Jeong

Gyu-Yeol Kim

Du-yeul Kim

Hong-jun Lee

Seok-Ho Park

Bu-yeal Jung

A semiconductor memory device includes: a memory cell array including a plurality of memory cells; an error correction code (ECC) engine configured to detect and/or correct at least one error bit in read data and configured to generate a decoding status flag indicative of whether the at least one error bit is detected and/or corrected, wherein the read data is read from the memory cell array; a channel interface circuit configured to receive the read data and the decoding status flag from the ECC engine and configured to transmit the read data and the decoding status flag to a memory controller, wherein the channel interface circuit is configured to transmit the decoding status flag to the memory controller through a pin; and a control logic circuit configured to control the ECC engine and the channel interface circuit in response to an address and a command from the memory controller.

Semiconductor memory devices and memory systems including the same

A precharge method of a semiconductor memory device that controls a precharge start time of each bank during a bank precharge operation, and a semiconductor memory device using the method, are provided. The device may latch an active or write order of respective banks and differently control precharge start times of the respective banks according to the latched active or write order during a plural-bank precharge operation to allow a plurality of banks to start precharge operations at different times.

Precharge method of semiconductor memory device and semiconductor memory device using the same

A method and semiconductor memory device for precharging a local input/output line. The semiconductor memory device, which may have an open bit line structure, transmits data through local input/output lines that are coupled to bit lines of first to n-th memory cell array blocks (n being a natural number). The semiconductor memory device may include a precharge unit configured to generate a plurality of precharge signals and a controller configured to control precharging of the at least one local input/output line responsive to block information corresponding to activation of at least one of the memory cell array blocks and responsive to at least one of the precharge signals.

Method of precharging local input/output line and semiconductor memory device using the method

A semiconductor memory device includes a first row of pads including a first plurality of data input/output (I/O) pads; a second row of pads including a second plurality of data I/O pads; and a first I/O multiplexer associated with the first row of pads and providing first output data only to at least one data I/O pad of the first row of pads, even after a data I/O mode of the semiconductor memory device has changed. The semiconductor memory device also includes a second I/O multiplexer associated with the second row of pads and providing second output data only to at least one data I/O pad of the second row of pads, even after the data I/O mode has changed.

Semiconductor memory device comprising two rows of pads

A semiconductor memory device to which information of different data bits can be written, and a method of electrically testing the semiconductor memory device are provided. In a mode for testing a memory cell array of the semiconductor memory device, the semiconductor memory comprises a control signal generation pad capable of writing non-identical data to data input/output pads of each group when data is written to the memory cell array.

Semiconductor memory device capable of storing data of various patterns and method of electrically testing the semiconductor memory device

Provided is a synchronous semiconductor memory device with improved latency control. In one embodiment, the synchronous semiconductor memory device may include a clock synchronizing circuit, a latency circuit, and a latency control circuit. The clock synchronizing circuit may receive an external clock signal and output a data output clock signal. The latency circuit may store a read signal in response to at least one sampling clock signal, generate a plurality of clock control signals in a sequential manner, generate a plurality of transfer clock signals synchronized with the plurality of clock control signals, and supply a latency signal in response to the transfer clock signals. The latency control circuit may delay the plurality of clock control signals by the sum of output delay time and the read command delay time so as to generate a plurality of sampling clock signals synchronized with the plurality of delayed clock control signals.

Synchronous semiconductor memory device

There is provided a memory device in which memory cells may be tested using several different test data patterns. The memory device may include a switch unit, a plurality of storage units, and a selector. The switch unit may transfer bits of data received in response to a mode control signal to memory cells or transfers bits of test data to the memory cells. The plurality of storage units respectively stores bits of test data in response to bits of an input control signal. The selector applies test data stored in one of the storage units to the switch unit in response to the input control signal.

Semiconductor memory device and method for testing memory cells using several different test data patterns

A semiconductor test circuit is installed inside a semiconductor device to measure the state of at least one electrical signal of the semiconductor device, and includes first, second, and Nth signal selecting units (where N is an integer greater than 2). The first signal selecting unit either outputs a first electrical signal received from a first terminal or provides a high impedance state to a pad connected to a second terminal in response to a first control signal. The second signal selecting unit either outputs a second electrical signal received from a first terminal or provides a high impedance state to the pad connected to a second terminal in response to a second control signal. The Nth signal selecting unit either outputs an Nth electrical signal (N is an integer) received from a first terminal or provides a high impedance state to the pad connected to the second terminal in response to an Nth control signal.

Semiconductor test circuit

A semiconductor memory device including a delay locked loop (DLL) that is capable of turning off the DLL in a precharge mode while maintaining locking information stored before the DLL operates in the precharge mode is provided. The DLL includes an ON/OFF mode for turning the DLL on or off. The DLL also includes a standby mode for turning the DLL off while still maintaining locking information stored before the DLL operates in a precharge mode in response to the activation of a standby enabling signal. The standby enabling signal is inactive when the DLL locks. The standby enabling signal is active when DLL lock is complete.

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Seoul, South Korea

Yong-Gyu Chu