Nexeon Limited

Other

Yong Gil Choi

Seon Hee Park

Young Tai Cho

Jee Hye Park

Hee Young Seo

Seung Chul Park

Yong Eui Lee

Chul Hwan Kim

Young Jae Lee

Young Jin Hong

Eui Joon Song

Min Young Cheong

Sung Hwan Kang

Jong Hun Lee

Tae Jin Yang

The present invention relates to a method for preparing silicon-based active material particles for a secondary battery and silicon-based active material particles. The method for preparing silicon-based active material particles according to an embodiment of the present invention comprises the steps of: providing silicon powder; dispersing the silicon powder into an oxidant solvent to provide a mixture prior to grinding; fine-graining the silicon powder by applying mechanical compression and shear stress to the silicon powder in the mixture prior to grinding to produce silicon particles; producing a layer of chemical oxidation on the fine-grained silicon particles with the oxidant solvent while applying mechanical compression and shear stress to produce silicon-based active material particles; and drying the resulting product comprising the silicon-based active material particles to yield silicon-based active material particles.

Method for preparing silicon-based active material particles for secondary battery and silicon-based active material particles

The present invention relates to a method for producing silicon-based active material particles for a secondary battery and silicon-based active material particles. A method for producing silicon-based active material particles for a secondary battery according to an embodiment of the present invention may comprise: a step of providing silicon powder; a step of providing a pre-pulverization mixture in which the silicon powder is dispersed in a solvent for dispersion comprising an antioxidant; a step of applying mechanical compression and shear stress to the silicon powder of the pre-pulverization mixture to refine the silicon powder, thereby forming silicon particles having an oxygen content controlled by the antioxidant; and a step of drying the resulting material comprising the silicon particles to obtain silicon-based active material particles.

Silicon-based active material particles for secondary battery and method for producing same

The present invention relates to a silicon-based anode active material and a method for manufacturing the same. The silicon-based anode active material according to an embodiment of the present invention comprises: particles comprising silicon and oxygen combined with the silicon, and having a carbon-based conductive film coated on the outermost periphery thereof; and boron doped inside the particles, wherein with respect to the total weight of the particles and the doped boron, the boron is included in the amount of 0.01 weight % to 17 weight %, and the oxygen is included in the amount of 16 weight % to 29 weight %.

Silicon-based anode active material and method for manufacturing same

The present invention relates to a silicon-based anode active material and a method of fabricating the same. The silicon-based anode active material according to an embodiment of the present invention comprises: particles comprising silicon and oxygen combined with the silicon, wherein a carbon-based conductive layer is coated with on outermost surface of the particles; and phosphorus doped in the particles, wherein a content of the phosphorus with respect to a total weight of the particles and the phosphorus doped in the particles have a range of 0.01 wt % to 15 wt %, and a content of the oxygen has a range of 9.5 wt % to 25 wt %.

Silicon-based anode active material and preparation method therefor

The present invention relates to a silicon anode active material capable of high capacity and high output, and a method for fabricating the same. A silicon anode active material according to an embodiment of the present invention includes a silicon core including silicon particles; and a double clamping layer having a silicon carbide layer on the silicon core and a silicon oxide layer between the silicon core and the silicon carbide layer.

Silicon anode active material and preparation method therefor

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Daejeon, South Korea

Yong Gil Choi