Honeywell International Inc.

Teccor Electronics, LP

Yong-Fa Wang

Scott Edward Beck

Robert E Higashi

Ian Bentley

Philip C Foster

Bill Hoover

Keith Francis Edwin Pratt

Cristian Vasile Diaconu

Richard Alan Davis

Elmer Lee Turner, Jr

Larry A Rehn

Thuy-Doan Pham

Philip Clayton Foster

A fabrication method for protecting an electrical component on a semiconductor device when subjected to exposure to highly energized electrons, such as those emitted during e-beam irradiation, is provided. An example method may include doping one or more lead-out regions providing an electrical connection to the electrical component of the semiconductor device. In addition, the method may further include forming the electrical component to electrically connect to at least one of the one or more lead-out regions by doping the surface of the semiconductor substrate with a second dopant. Further, the method may include forming a protective barrier on the surface of the semiconductor substrate, substantially aligned with the one or more lead-out regions. The method may further comprise creating one or more cap regions substantially covering the entire surface of the semiconductor except for the lead-out regions by doping the surface of the semiconductor with a third dopant.

Method for applying a cap layer to protect electrical components of a semiconductor device from e-beam irradiation

Example systems, apparatuses, and methods are disclosed sensing a flow of fluid using a thermopile-based flow sensing device. An example apparatus includes a flow sensing device comprising a heating structure having a centerline. The flow sensing device may further comprise a thermopile. At least a portion of the thermopile may be disposed over the heating structure. The thermopile may comprise a first thermocouple having a first thermocouple junction disposed upstream of the centerline of the heating structure. The thermopile may further comprise a second thermocouple having a second thermocouple junction disposed downstream of the centerline of the heating structure.

Thermopile-based flow sensing device

Methods and apparatuses associated with an example flow sensing device are provided. In some examples, the flow sensing device may include a flow cap component and a sensor component. In some examples, the flow cap component may include a heating element disposed in a first layer of the flow cap component. In some examples, the sensor component may include at least one thermal sensing element disposed in a second layer of the sensor component. In some examples, the first layer and the second layer are noncoplanar. In some examples, the flow cap component may be bonded to a first surface of the sensor component to form a flow channel. In some examples, the first layer and the second layer may be noncoplanar and separated by the flow channel.

Flow sensing device

Embodiments relate generally to systems, devices, and methods for depositing an electrode and an electrolyte on a microelectromechanical system (MEMS) electrochemical sensor. A method may comprise providing a blade on a surface of a substrate; providing a ridge along the perimeter of the substrate; pressing the electrode and the electrolyte onto the blade and the ridge; cutting the electrode into multiple electrodes; positioning the electrolyte to contact the surface, the blade, and the ridge; and positioning the multiple electrodes to contact the surface, the blade, and the ridge.

Method of depositing electrodes and electrolyte on microelectromechanical system electrochemical sensors

Apparatus and associated methods relate to a micro-electro-mechanical system (MEMS) based gas sensor including an electrolyte contacting one or more top electrode(s) arranged on the bottom surface of a top semiconductor substrate (TSS), and one or more bottom electrode(s) arranged on the top of a bottom semiconductor substrate (BSS), the TSS and BSS joined with an adhesive seal around the electrolyte, the sensor including one or more capillaries providing gaseous communication to the electrolyte from an external ambient environment. The electrodes may be electrically accessed by one or more vias to externally accessible bond pads. In some examples, an electrical connection may be made from an additional bond pad on top of the TSS to the electrolyte. Various embodiments may reduce the size of various gas sensors to advantageously allow their inclusion into portable electronic devices.

Electrochemical gas sensor constructed with MEMS fabrication technology

Thermophile-based flow sensing device

Improved sensors are disclosed that include a heater resistor and/or one or more sensor resistors. In some instances, the heater resistor may be configured to have a zero or near-zero temperature coefficient of resistance (TCR), while one or more sensor resistors may be configured to have a non-zero higher TCR. In some instances, the heater resistor may include a polysilicon material that is doped with a first concentration of dopant, and the one or more sensing elements may include a polysilicon material that is doped with a second higher concentration of dopant. In some cases, the first concentration of dopant may be configured to provide a heater resistor that has a zero or near-zero temperature coefficient of resistance (TCR).

Sensor with improved thermal stability

A potassium hydroxide (KOH) etch process can produce deep high aspect ratio trenches in (110) oriented silicon substrates. The trenches, however, are perpendicular to the (111) direction of the silicon substrate's crystal lattice. The trenches are used to produce thermally isolating areas and through the wafer electrical connections. These structures can be produced in a cost effective manner because of the nearly ideal capabilities of the KOH etch process when it is applied to appropriate materials at appropriate orientations.

Creating novel structures using deep trenching of oriented silicon substrates

A semiconductor device with two epitaxial layers formed on a substrate. The middle layer of epitaxial material can be formed thin and with an appropriate doping concentration to provide a low avalanche breakdown voltage with a negative resistance characteristic. The top layer of epitaxial material is doped with the same concentration as the substrate to provide a two-terminal thyristor device with symmetrical bidirectional operating characteristics.

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Coppell, TX, United States of America

Yong-Fa Wang