Other

Yong Deuk Ko

Jeng H Hwang

Se Jin Oh

Chan Ouk Jung

Contaminants are generated during etching processes for forming electrodes of storage capacitors for very high density future memory cells, such as ferroelectric random access memory (FeRAM) cells. These contaminants include significant quantities of noble metals, and in particular iridium and iridium compound particulates. In order to prevent undesirable iridium and iridium compound particulates from adversely affecting subsequent etching processes performed in the chamber, the plasma metal etch chamber is seasoned by exposing interior surfaces of the chamber to a seasoning plasma generated from a gas mixture comprising at least two gases selected from the group consisting of BCl , HBr, and CF . The chamber seasoning method of the invention is also applicable to etch processes involving other noble metals, such as platinum.

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Kyonggi, South Korea

Yong Deuk Ko