Samsung Electronics Co., Ltd.

Yong-Chan Kim

Moo-Sup Lim

Eun-Sub Shim

Seung-sik Kim

Hye-Young Park

Jong-Youb Kim

Dae-Shik Kim

Mueng-Ryul Lee

Joung-Ho Kim

Oh-Kyum Kwon

Yong-Don Kim

Eung-Kyu Lee

Young-Dawn Bae

Eun-chang Choi

Joon-Suk Oh

Myung-Hee Kim

Jong-Wook Lim

Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.

Unit pixel of image sensor, image sensor including the same and method of manufacturing image sensor

A schottky diode may include a schottky junction including a well formed in a semiconductor substrate and a first electrode contacting the first well. The well may have a first conductivity type. A first ohmic junction may include a first junction region formed in the well and a second electrode contacting the first junction region. The first junction region may have a higher concentration of the first conductivity type than the well. A first device isolation region may be formed in the semiconductor substrate separating the schottky junction and the first ohmic junction. A well guard having a second conductivity type opposite to the first conductivity type may be formed in the well. At least a portion of the well guard may be formed under a portion of the schottky junction.

Schottky diode and method of fabricating the same

A semiconductor integrated circuit device may include: a substrate that includes a high-voltage device region and a low-voltage device region defined on the substrate; a first buried impurity layer formed in at least a portion of the high-voltage device region and coupled to a first voltage; a second buried impurity layer formed in at least a portion of the low-voltage device region and coupled to a second voltage less than the first voltage; and a well formed on the second buried impurity layer in the low-voltage device region and coupled to a third voltage less than the second voltage.

Semiconductor integrated circuit devices

There is provided a viterbi decoder for decoding convolutional data. The convolutional data includes punctured data and non punctured data. The decoder includes a branch metric unit for calculating branch metrics of the received convolutional data. An add-compare-select unit selects current and next path selection information and calculates a current state metric and a next state metric of the punctured data, from the branch metrics and a previous state metric. A traceback unit traces the current and the next path selection information selected in the add-compare-select unit to find a maximum likelihood path from which the convolutional data was received, and outputs decoded data. A controller generates a plurality of decoding control signals to the branch metric unit, the add-compare-select unit, and the traceback unit.

Add-compare-select circuit for viterbi decoder

The present invention relates to an integrated viterbi decoder with improved test function. The viterbi decoder recovers original symbol and data bits from convolutional binary symbol stream, reducing a noise and data loss originated from a channel fading. For enhancing the test function of the viterbi decoder, the viterbi decoder of the present invention stores predetermined test control signals in a test register. During a test, the test control signals are synchronized with a test clock apart from a frame synchronous signal of the viterbi decoder. The test time of the viterbi decoder, thus, is not restricted by the frame synchronous signal. As a result, the test time of the viterbi decoder can be reduced without addition of an external pin.

Viterbi decoder with enhanced test function

A refrigerant expansion device for a refrigeration cycle comprises a housing, a passage formed penetrating the housing, an expansion means for expanding the refrigerant passing through the passage and a flow rate control means for bypassing some of the refrigerant passing through the expansion means according to the pressure of the refrigerant, for supplying to the low pressure portion of the passage, and for controlling the flow rate of the refrigerant through the expansion means.

Refrigerant expansion device

Growing community of inventors

Seongnam-si, South Korea

Yong-Chan Kim