Samsung Electronics Co., Ltd.

Yong Chai Kwon

Jong Ho Lee

Dong Ho Lee

Eun Chul Ahn

Dong-Ho Lee

Kang-Wook Lee

Keum-Hee Ma

Seong-il Han

A method of fabricating a semiconductor device includes providing a semiconductor substrate having an active surface, thinning the substrate by removing material from a second surface of the substrate opposite the active surface, bonding a metal carrier to the second surface of the thinned substrate, forming a via opening in the thinned substrate, forming a conductive member in the via opening, and patterning the metal carrier bonded to the second surface of the thinned substrate to form a metal pattern.

Method of fabricating a 3-D device

Method of fabricating a semiconductor device, and semiconductor device with a conductive member extending through a substrate and connected to a metal pattern bonded to the substrate

Example embodiments are directed to a method of forming a semiconductor structure and a semiconductor structure including a semiconductor unit including a protrusion on a front side of the semiconductor unit and a recess on a backside of the semiconductor unit.

Semiconductor structure and method for forming the same

Growing community of inventors

Suwon-si, South Korea

Yong Chai Kwon