Other

Dainippon Screen Mfg. Co., Ltd.

Mitsubishi Pencil Kabushiki Kaisha

C.uyemura Co., Ltd.

Nobatsu Watanabe

Yong-Bo Chong

Morita Kagaku Co., Ltd.

Nobuatsu Watanabe

Akira Izumi

Sowjun Matsumura

Hiroyuki Idogawa

Keiji Toei

Atsushi Wakata

Tetsuro Tojo

Toshio Tatsuno

Tomoyoshi Okada

Kenji Ikari

A fluorine compound-containing composite material consists essentially of a metal or polymer matrix and particles or fibers of a polytetrafluoroethylene oligomer having a number average molecular weight of 10,000 or less, the proportion of the number of fluorine atoms to the number of the total atoms at the surface portion of the composite material being 40% or more.

Fluorine compound--containing composite material and method for

Fluorine compound - containing composite material and method of

The present invention provides a recording material containing a carbonaceous powder whose surfaces are modified with a fluorine gas. Even when the recording material of the present invention is stored for a long period of time, a carbonaceous powder such as a graphite powder or carbon black neither coheres nor precipitates. For example, even if the recording material of the present invention is used in a felt pen or a ball-point pen, the carbonaceous powder does not cohere in the container or the pen point, and therefore any clogging does not occur in the pen point and good writing is possible.

Recording material containing carbonaceous powder whose surface is

In oxide film removing equipment for removing a SiO.sub.2 film on a semiconductor substrate by using hydrogen fluoride, a liquid mixture of hydrogen fluoride and methyl alcohol is prepared in a chemical factory beforehand. The liquid mixture of hydrogen fluoride and methyl alcohol is heated to generate azeotropic vapor at a semiconductor works and the vapor is used to remove the SiO.sub.2 film on the substrate. The liquid mixture of hydrogen fluoride and methyl alcohol previously prepared in the chemical factory increases safety during an operation at the semiconductor works.

Oxide film removing apparatus and removing method thereof using

Disclosed is a carbon electrode having low polarizability, comprising a porous carbon block and, contained in the pores thereof, a metal fluoride mixture composed of LiF and a metal fluoride other than LiF. This carbon electrode can easily be obtained by a skillful impregnation method. When such a carbon electrode is used as an anode in electrolyzing an electrolyte comprising a mixed molten salt system of potassium fluoride and hydrogen fluoride in an electrolytic cell, polarization of the anode is extremely low and the anode effect is remarkably suppressed so that the electrolysis can stably be performed while exhibiting not only a high anodic current density but also a low voltage.

Carbon electrode having low polarizability

A method for removing a film on a silicon layer formed on a surface of a substrate includes the steps of: (a) placing a substrate in a reaction chamber to be isolated hermetically from the outside air, and (b) feeding anhydrous hydrogen fluoride and alcohol simultaneously into the reaction chamber. Preferably, the method further includes the step of feeding only alcohol into the reaction chamber prior to and/or subsequent to the step (b). An alcohol layer is formed on the substrate surface, whereby the film can be removed uniformly by anhydrous hydrogen fluoride. A by-product of the reaction is taken out from the system of reaction by means of the alcohol on the substrate. No by-product remains on the substrate after the reaction. Since the silicon layer after the reaction is covered with alcohol, re-growth of a native oxide film thereon is also suppressed and on ionic contamination such as fluorine remains on the substrate surface.

Method for removing a film on a silicon layer surface

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Kyoto, Japan

Yong-Bo Chong