Samsung Electronics Co., Ltd.

Yong-Ah Kim

Myoung-ho Kang

Seong-Yul Park

Chang Hyeon Lee

Dong Hyo Park

A semiconductor device is provided. The semiconductor device comprises a substrate including a first region, a second region, and a connecting region placed between the first region and the second region, a plurality of first multi-channel active patterns placed in the first region of the substrate, a plurality of second multi-channel active patterns placed in the second region of the substrate, a first connecting fin type pattern which is placed in the connecting region of the substrate and extends from the first region to the second region in a first direction, and a field insulating film which is placed on the substrate and covers an upper surface of the first connecting fin type pattern, wherein a width of the first connecting fin type pattern in a second direction decreases and then increases as it goes away from the first region, and the first direction is perpendicular to the second direction.

Growing community of inventors

Seongnam-si, South Korea

Yong-Ah Kim