Hitachi, Ltd.

Hitachi Haramachi Semi-conductor, Ltd.

Other

Yoko Wakui

Hiroaki Hachino

Ryuichi Saito

Yoshiro Mikami

Makoto Tsumura

Yoshiharu Nagae

Masaaki Kitajima

Katsuyuki Funahata

Makoto Matsui

Fumiaki Nemoto

Nobutake Konishi

Yasuhiro Mochizuki

Michio Ooue

Kikuo Ono

Genshiro Kawachi

Akira Sasano

Tasao Soga

Yutaka Misawa

Takeo Yamazaki

Mamoru Sawahata

Tomio Yasuda

Tetuo Kosugi

Etsuko Kimura

A liquid crystal active matrix display device includes a first substrate having a thin film transistor formed thereon. A light-screening film,is located on the first substrate in a manner to be overlapped with an ITO. The display device includes a second substrate having a color filter and a light-screening film,formed thereon. The second substrate is opposed to the first substrate. The light-screening film,extends from the uncontrollable area by a certain value depending on a voltage from the external, resulting in improving a numerical aperture.

Liquid crystal display device and driving method therefor

A liquid crystal active matrix display device includes a first substrate having a thin film transistor formed thereon. A light-screening film 1 is located on the first substrate in a manner to be overlapped with an ITO. The display device includes a second substrate having a color filter and a light-screening film 2 formed thereon. The second substrate is opposed to the first substrate. The light-screening film 2 extends from the uncontrollable area by a certain value depending on a voltage from the external, resulting in improving a numerical aperture.

A liquid crystal display comprises a lower substrate provided with a plurality of scanning signal lines, a plurality of image signal lines perpendicularly intersecting the scanning signal lines, a plurality of thin-film transistors formed at the intersection points of the scanning signal lines and the image signal lines, and a plurality of pixel electrodes connected respectively to the thin-film transistors; an upper substrate disposed opposite to the lower substrate and provided with a common electrode opposite to the pixel electrodes; and liquid crystal layer sealed in a space formed between the lower and the upper substrate. Each of the scanning signal lines is formed so as to form the gate electrode of a corresponding thin-film transistor, the scanning signal lines are formed by processing a metal film of columnar crystal grains, and the surface of the metal film is coated with a self-aligned oxide film.

Method of making liquid crystal display

TFT substrate having scanning lines of metal films of columnar crystal

First pixel electrodes and scan signal electrodes are formed in the same plane, and the first pixel electrodes and video signal electrodes are insulated and separated from each other by gate SiN films. Additional capacitors are formed by second pixel electrodes which are connected to the first pixel electrodes through apertures formed in the gate SiN films and which may be cut by a laser beam, and the scan signal electrodes. Thus, a short circuit defect between the electrodes is prevented, a highly reliable additional capacitor is attained, break of wiring is reduced and an aperture factor can be improved by expanding a width of the first pixel electrode. Thus, a multi-tonality and highly fine liquid crystal display device can be manufactured with a high yield.

Liquid crystal display with supplemental capacitors and method for

Disclosed is a semiconductor device constructed such that among elements forming a brazing material for bonding an electrode on a semiconductor substrate to an external electrode, the amounts of those elements which react with the material of the electrode or external electrode and form a compound harder and more brittle than the electrode material are smaller on the portion coming into contact with the electrode or external electrode than at the other portions. A fabrication method of such a semiconductor device is also disclosed, which method involving the steps of laminating and depositing an at least two-layered metallic layer on the surface of the electrode on the semiconductor substrate or on the surface of the external electrode, bringing the electrodes of the at least two-layered metallic layer into intimate contact with each other while opposing one another, and bonding them together in the presence of the force of pressure applied to both electrodes while they are being heated to a temperature close to an eutectic temperature of an alloy consisting of the metals of the uppermost layer and subsequent layer, immediately therebelow, of the metallic layer.

Semiconductor device and fabrication method thereof

A semiconductor device is disclosed which is provided with at least one flexible conducting film having an inner electrode portion and an outer electrode portion. The inner electrode portion is conductively bonded to at least one of two kinds of electrode films formed on one main surface of a semiconductor substrate, and has a form similar to the shape of the electrode film. The outer electrode portion is integrated with the inner electrode portion into one body but is not bonded to the electrode film. The conducting film can be previously bonded to a transparent insulating film, if desired, and is arranged in registry with the electrode film on the semiconductor substrate, while being supported by the insulating film. Accordingly, the inner electrode portion of the conducting film is bonded to the electrode film having a complicated pattern, readily and accurately. The inner electrode portion serves to reduce the electric resistance of the electrode film and to increase the current capacity of the electrode. If a transparent insulating film has been used, it can be removed after device formation, if desired.

Semiconductor device having ribbon electrode structure and method for

A method of manufacturing a semiconductor device of the type wherein aluminum layers are selectively deposited on a major surface of a silicon semiconductor substrate and thereafter aluminum is selectively diffused into the silicon semiconductor substrate by means of heat treatment. SiO.sub.2 mask is selectively formed on at least one major surface of the silicon semiconductor substrate, then aluminum is deposited onto the major surface being close to but separated from the SiO.sub.2 mask, subsequently the silicon semiconductor substrate is subjected to a heat treatment to selectively diffuse the aluminum into the silicon semiconductor substrate. The SiO.sub.2 mask which is formed before the heat treatment prevents impurity atoms from autodoping through the SiO.sub.2 mask. No cracking occurs in the SiO.sub.2 mask because the aluminum diffusion source is apart from the periphery of the SiO.sub.2 mask.

Method of manufacturing semiconductor device having aluminum diffused

A method of fabricating a semiconductor device of the type wherein aluminium layers are selectively deposited on the major surface of a silicon semiconductor substrate and thereafter aluminium is selectively diffused into the silicon semiconductor substrate by means of heat treatment in an atmosphere including an oxygen gas. Recesses are selectively formed in at least one major surface of the silicon semiconductor substrate, aluminium is deposited onto the recesses, and the silicon semiconductor substrate is then subjected to a heat treatment to selectively diffuse the aluminium into the silicon semiconductor substrate. Layers of oxide of silicon-aluminium alloy formed on the major surface subjected to the aluminium diffusion will not cause any damage of a photo-mask and at the same time accuracy in positioning the photo-mask may be improved. A failure to mount a semiconductor element onto a heat sink may also be prevented.

Method of fabricating a semiconductor device

An alkyl compound of zinc is reacted with alkyl compounds or alkoxyl compounds of boron and silicon in the presence of oxygen, thereby to deposit on a substrate zinc borosilicate glass film through a chemical vapor deposition process. The outlet nozzle of a raw material supply conduit for introducing the raw material compounds into a reaction zone is opened in the direction substantially in parallel with a surface of the substrate on which the glass film is to be deposited so that raw materials may be well mixed at the reaction zone. The glass film thus produced has a uniform thickness and a homogeneous composition of the constituents over an area at least of 40 mm extending from the nozzle and is suited for use as protection films for semiconductor devices and dielectric layer for a thin film capacitor on an industrial base.

Growing community of inventors

Ibaraki-ken, Japan

Yoko Wakui