Canon Kabushiki Kaisha

Renesas Technology Corp.

Yoko Uchida

Takuma Mikawa

An image processing apparatus for applying image processing to image data by adjusting values of a plurality of adjustment items, comprises an acquisition unit configured to acquire a characteristic of the image data by analyzing the image data, a decision unit configured to decide an order of settings of the values of the plurality of adjustment items based on the acquired characteristic of the image data, and a display unit configured to display value setting fields used to set the values of the adjustment items on a screen in accordance with the decided order.

Image processing apparatus, image processing method, and program

An image processing apparatus determines categories for classifying image data based on shooting information of the image data, generates an update information file for each category, and uploads the update information file along with the image data to an image managing server. A client terminal registers, in advance, the address of a desired update information file, and periodically checks the update information file in the image managing server. If the update information file indicates that new image data has been added to the image managing server, the image data is downloaded in accordance with the file path described in the update information file.

Image sharing system, image managing server, and control method and program thereof

A semiconductor device which can enhance adhesiveness between a barrier conductive film and an organic insulating film, and prevent film-fall-off, and the manufacturing technique thereof are provided. After a silicon nitride film is formed on the main surface of semiconductor substrate, an organic insulating film is formed on the silicon nitride film. The organic insulating film is formed of a material having a dielectric constant lower than that of a silicon oxide film. Subsequently, wiring grooves are formed in the silicon nitride film and the organic insulating film by means of a photolithography technique and etching technique. An oxide film is formed by irradiating the organic insulating film with ultraviolet rays by use of excimer lamp. The ultraviolet-ray irradiation is performed in an atmosphere containing oxygen. A tantalum film serving as a barrier conductive film is formed on the organic insulating film with the mediation of the oxide film.

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Yokohama, Japan

Yoko Uchida