Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Yoko Takekawa

Masafumi Asano

Kazuhiro Takahata

Satoshi Tanaka

Shigeki Nojima

Masato Suzuki

Kenji Konomi

Yasutada Nakagawa

Yohko Furutono

Sachiko Kobayashi

Tomoko Ojima

Yingkang Zhang

Ryouichi Inanami

According to one embodiment, a mold includes a base, a first concave pattern, a second concave pattern, and a third concave pattern. The base includes a first surface and a pedestal projecting from the first surface. The pedestal includes a first region and a second region disposed outside the first region. The first concave pattern is formed in the first region. The second concave pattern is formed in the second region. The third concave pattern extends from the first region to the second region.

Mold and mold manufacturing method

In general, according to one embodiment, a method is disclosed for a droplet positioning method. The method can include determining an amount of the droplet required in each of a first region, determining a total amount of the droplet, determining a total number of the droplets, determining a provisional positioning of the droplets based on a template contact form, redividing the face for forming the base body pattern again using the second regions, and determining an evaluation value for each second region. If the distribution of the evaluation values is out of the target range, a repositioning at least any of the droplets, redividing the face for forming the base body pattern again using the second regions, and determining an evaluation value for each second region are repeated until distribution of the evaluation values is in the target range.

Droplet positioning method, pattern forming method, droplet positioning program, droplet positioning device, and template pattern design method

According to one embodiment, a mask pattern creation method includes extracting an area, in which a DSA material is directed self-assembled to form a DSA pattern, from a design pattern area based on a design pattern and information on the DSA material. The method also includes creating a guide pattern that causes the DSA pattern to be formed in the area based on the design pattern, the information on the DSA material, the area, and a design constraint when forming the guide pattern. The method further includes creating a mask pattern of the guide pattern using the guide pattern.

Mask pattern creation method, recording medium, and semiconductor device manufacturing method

Described herein are methods and systems for efficiently preparing a wafer layout for processing into a photomask. Portions of layouts containing semiconductor features and designs that are frequently used can be stored in a database. These portions can be post-decomposition, with all treatment and error checking already performed upon them. When a wafer layout is received for processing into a photomask, the processing and decomposition time can be reduced by analyzing the layout, and replacing sections of the layout with the portions from the database that have already been decomposed and processed. As these sections no longer need to be decomposed, error checked, and treated, the processing time is greatly reduced, and photomasks can be made quicker and more efficiently.

Efficient decomposition of layouts

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Tokyo, Japan

Yoko Takekawa