Tokyo Electron Limited

Yoko Naito

Takashi Akahori

Tadashi Hirata

Masahide Saito

Shuichi Ishizuka

Risa Nakase

Takeshi Aoki

Shunichi Endo

Masaki Tozawa

Osamu Yokoyama

Hideaki Amano

A method for use in a plasma treatment system that shortens the time required for the cleaning of a fluorine containing carbon film adheared in a vacuum vessel and protects the surface of a transfer table when the cleaning is carried out. After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O gas is produced, and the C&mdash;C and C&mdash;F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O gas penetrates into the CF film at places where the C&mdash;C and C&mdash;F bonds have been cut, to react with C of the CF film to form CO which scatters. On the other hand, F scatters as F . Thus, the CF film is removed.

Method for cleaning plasma treatment device and plasma treatment system

Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

Plasma film forming method and plasma film forming apparatus

It is an object to enhance the degree of freedom for the shape of an obtained magnetic field to enhance the inplane uniformity of thickness of first and second films when the first and second films are continuously formed on a substrate to be treated. A main electromagnetic coil,is provided outside of a plasma chamber,so as to be movable vertically by a lifting shaft,When plasma is produced in a vacuum vessel,by the electron cyclotron resonance between a microwave and a magnetic field to continuously deposit a film of a two-layer structure, which comprises an SiOF film and an SiO,film, on a wafer W with the produced plasma, a process for forming the SiOF film is carried out while the main electromagnetic coil,is arranged so that the lower surface of the coil,is positioned at a lower position than the lower surface of a transmission window,by 139 mm, and a process for forming the SiO,film is carried out while the main electromagnetic coil,is arranged so that the lower surface of the coil,is positioned at a lower position than the lower surface of the transmission,by 157 mm.

Plasma treatment system and method

For example, in a plasma processing system, C,F,gas and C,H,gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of 350&deg; C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film,having an F content of, for example, 22% on silicon substrate,This CF film,has a relative dielectric constant of 2.4.

Semiconductor device and method for producing the same

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Sagamihara, Japan

Yoko Naito