Globalfoundries Singapore Pte. Ltd.

Nanyang Technological University

Yoke King Chin

Kin Leong Pey

Dexter Xueming Tan

Sai Hooi Yeong

Chee Mang Ng

Kuang Kian Ong

A method for forming a device is disclosed. A substrate with a contact region is provided. Vacancy defects are formed in the substrate. The vacancy defects have a peak concentration at a depth D. A metal based contact is formed in the contact region. The metal based contact has a depth Dwhich is equal to about D. The vacancy defects lower the resistance of the metal based contact with the substrate.

Low OHMIC contacts

Embodiments relate to a method for fabricating nano-wires in nano-devices, and more particularly to nano-device fabrication using end-of-range (EOR) defects. In one embodiment, a substrate with a surface crystalline layer over the substrate is provided and EOR defects are created in the surface crystalline layer. One or more fins with EOR defects embedded within is formed and oxidized to form one or more fully oxidized nano-wires with nano-crystals within the core of the nano-wire.

Method for fabricating nano devices

Growing community of inventors

Singapore, Singapore

Yoke King Chin