Toyota Jidosha Kabushiki Kaisha

Nippon Steel Corporation

Yoji Sato

Takayasu Sato

Kazutaka Tachibana

Hiromichi Nakata

Daiki Tsuboi

Satoshi Arai

Shinya Sano

Masaaki Kondo

Toshimitsu Takahashi

Seiji Okamura

Izuru Yamamoto

Yasuo Ohsugi

Kazuyoshi Manabe

Eiji Yanagida

Tsuyoshi Hamaya

Osamu Ariyada

Shota Matsuda

Yuji Takano

Ryo Tsurumoto

A film forming apparatus includes a cylindrical evaporation source, an electrode, and a gas passage. The evaporation source is composed of metal and includes an internal space for accommodating a workplace. The electrode is arranged in the internal space of the evaporation source, The gas passage supplies gas to the internal space of the evaporation source from a space outside the evaporation source. The gas passage includes an end portion located in the internal space. The end portion of the gas passage includes a first section composed of a first material and a second section composed of a second material. The first material and the second material have different thermal expansion coefficients.

Film forming apparatus

A method of annealing a metal member includes: disposing a first heater in an inner space of a hollow cylindrical metal member having an inner peripheral surface provided with plural teeth protruding toward a central direction, the first heater radiating infrared light and being disposed so as to extend parallel to a direction of a central axis of the metal member; heating the metal member from the inner space with the first heater; and gradually cooling the metal member after heating.

Method of annealing metal member

A PCVD apparatus includes a waveguide member which supports the workpiece with a portion of the waveguide member positioned in a reactor and causes microwaves output from a high-frequency output device to propagate to the workpiece. In a process of gradually increasing an intensity of the microwaves propagating to the workpiece through the waveguide member from '0', the intensity of the microwaves output from the high-frequency output device when step-up of a bias current of the workpiece occurs is referred to as a first intensity, and in a process of gradually increasing the intensity of the microwaves from the first intensity, the intensity of the microwaves when step-up of the bias current occurs again is referred to as a second intensity. During film formation, the microwaves having an intensity of higher than the first intensity and lower than the second intensity are output from the high-frequency output device.

Film forming method and plasma chemical vapor deposition apparatus

A plasma chemical vapor deposition device includes a chamber, a first conductor having an elongated shape, a second conductor having a tubular shape, a high-frequency output device, and a direct-current power supply. A first connecting portion of the first conductor with the high-frequency output device and a second connecting portion of the first conductor with the direct-current power supply are both placed outside the chamber. A distance from one end of the first conductor to the first connecting portion is shorter than a distance from the one end of the first conductor to the second connecting portion. An impedance change portion is provided between the first connecting portion and the second connecting portion in the first conductor, the impedance change portion having an impedance different from an impedance between the one end of the first conductor and the first connecting portion.

Plasma chemical vapor deposition device

A film forming device includes a cylindrical evaporation source, closing members, and an auxiliary electrode. The cylindrical evaporation source is configured to accommodate a workpiece in an internal space of the cylindrical evaporation source. The cylindrical evaporation source is configured to discharge ions from the cylindrical evaporation source by arc discharge such that the ions are deposited on a surface of the workpiece. The closing members close the internal space. The auxiliary electrode is disposed along an inner wall surface of the cylindrical evaporation source. The auxiliary electrode is configured to be grounded or to be applied with a positive voltage such that electrons of the internal space flow to the auxiliary electrode.

Film forming device

A high-frequency wave supplying structure includes a center conductor that extends in a specified direction, an outer conductor that is coaxial with the center conductor and grounded, and a cylindrical insulating member that is provided between the center conductor and the outer conductor. The distal end of the center conductor is a support portion that supports a workpiece W. A shield member is provided outward of the outer conductor to be coaxial with the outer conductor and the center conductor. The distal end of the shield member is located closer to the support portion in the specified direction than the distal end of the outer conductor. The insulating member includes a protruding portion that protrudes toward the support portion from an opening of the outer conductor. The protruding portion is opposed to the distal end of the outer conductor in the specified direction.

High-frequency wave supplying structure

An ultrasonic cleaner is provided. The ultrasonic cleaner includes: a first ultrasonic vibrator configured to generate a first ultrasonic wave; a first oscillator configured to drive the first ultrasonic vibrator; a wash tank configured to store a detergent solution; and an attenuation mechanism configured to damp vibration of the wash tank. The wash tank includes a parabolic surface which is a recessed surface facing a vibration surface of the first ultrasonic vibrator, and is configured to reflect the first ultrasonic wave to a focal position where an object to be cleaned is placed. The vibration of the wash tank is generated by the first ultrasonic wave impinging on the wash tank.

Ultrasonic cleaner

Growing community of inventors

Kasugai, Japan

Yoji Sato