Fujitsu Display Technologies Corporation

Fujitsu Corporation

Sharp Kabushiki Kaisha Corporation

Yoji Nagase

Yoshinori Tanaka

Tsuyoshi Kamada

Katsusige Asada

Tetsuya Fujikawa

Yoji Taniguchi

Yasuhiro Nasu

Tomoyuki Miyata

A substrate for a liquid crystal display device comprises a TFT substrate for holding opposing substrates arranged opposed to each other as well as a liquid crystal composition obtained by mixing a monomer into liquid crystals. A plurality of bus lines are formed on the TFT substrate intersecting each other through an insulating film, and thin-film transistors are formed close to positions where the plurality of bus lines and intersect each other. A plurality of thin-film transistors for polymerization are formed for applying a voltage to the pixel electrodes at the time of polymerizing the monomer, and a first common electrode wiring for polymerization is electrically connected to the gate electrodes of the plurality of thin-film transistors for polymerization.

Substrate for a liquid crystal display device comprising second thin-film transistors for applying a voltage to pixel electrodes for polymerizing the monomer

There is provided a substrate for a liquid crystal display with which static damage to TFT devices can be prevented and a thin frame can be achieved, a liquid crystal display having the same, and a method of manufacturing the same. Terminal sections to which signals are input from the outside and terminal sections for outputting the signals to driver ICs are constituted by a conductive layer different from gate bus lines and a common wiring. Thus, the gate bus lines can be connected to the common wiring through connection wirings even when the common wiring is provided in a location that is removed at a chamfering step. This makes it possible to prevent TFT devices from being damaged by static electricity up to the chamfering step. There is no increase in steps for manufacturing a TFT substrate. Further, since area limitations are reduced by forming the terminal sections, connection wirings and the common wiring as a plurality of conductive layers, it is easy to lay out wirings on the TFT substrate and design a thin frame at a designing step.

Substrate for liquid crystal display having multiple terminals connected to semiconductor chip, and liquid crystal display having the same

The present invention relates to a liquid crystal display provided with an electrostatic protection element and an object of the present invention is to provide the liquid crystal display provided with superior redundancy and at the same time a sufficient protection function against static electricity in which relatively low voltage generates for a long period of time. Electrostatic protection element sectionsandare provided with a first TFThaving a source electrode (S) and a drain electrode (D) where the source electrode (S) is connected to external output electrodesandand the drain electrode (D) is connected to common wiringsand, a second TFThaving a conductor, a source electrode (S), a drain electrode (D) and a gate electrode (G) where the conductoris connected to the gate electrode (G) of the first TFT, the source electrode (S) is connected to the external output electrodesand, the drain electrode (D) is connected to the conductorand the gate electrode (G) is electrically floated, and a third TFThaving a source electrode (S), a drain electrode (D) and a gate electrode (G) where the source electrode (S) is connected to the common wiringsand, the drain electrode (D) is connected to the conductorand the gate electrode is electrically floated.

Liquid crystal display

A storage capacitance Cs (&equals;Cs&plus;Csadd) added to a pixel capacitance is set such that a transmittance T at a voltage V of a pixel electrode becomes substantially equal to a transmittance T at a voltage V of the pixel electrode when a holding period is terminated. In the case of a normally black type liquid crystal display device, for example, when it is assumed that a white data voltage is VdW, a liquid crystal capacitance in white display is ClcW, and a liquid crystal capacitance in black display is ClcB, a capacitance value of the storage capacitance Cs is set such that difference between the transmittance obtained at the pixel voltage, that is changed by an amount of variation &Dgr;Vs of a pixel voltage expressed by &Dgr;Vs&equals;VdW((ClcW&minus;ClcB)/(ClcW&plus;Cs )), and the transmittance obtained at the white data voltage VdW can be reduced smaller than 13% of the transmittance obtained at the white data voltage VdW. Accordingly, a predetermined brightness can be obtained by one scanning in response to a display data signal.

Liquid crystal display device

A liquid crystal display device comprising: a gate bus line ; a data bus line crossing the gate bus line: a picture element electrode ; and a transistor including a first electrode connected to the data bus line, a second electrode connected to the picture element electrode, and a gate electrode , the first electrode , the second electrode or the gate electrode being extended along the gate bus line or the data bus line . The first electrode , the second electrode or the gate electrode is extended along the gate bus line or the data bus line , whereby a line disconnected part of the gate bus line or the data bus line can be repaired by the first electrode , the second electrode or the gate electrode

Liquid crystal display device and repair process for the same wherein TFT having particular electrodes

A plurality of parallel gate bus lines 16n, 16n+1, 16n+2, . . . and a plurality of parallel drain bus lines 18m, 18m+1, . . . are provided. Thin film transistors 14 are disposed near the lower end of sub-patterns 30n, 30n+1, 30n+2, . . . The source electrodes 36 of the thin film transistors 14 are picture element electrodes 12 through contact holes 38. The picture element electrodes 12 are formed at positions which are beyond a next gate bus line 16n, 16n+1, 16n+2, . . . Intermediate electrodes 40 for forming sub-capacitances Cs are formed on the lower ends of the picture element electrodes 12. The thin film transistor matrix device can form sub-capacitances of a large capacitance value and does not reduce fabrication yields.

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Kawasaki, Japan

Yoji Nagase