Sumitomo Heavy Industries Ion Technology Co., Ltd.

Yoji Kawasaki

Haruka Sasaki

Makoto Sano

Kazutaka Tsukahara

An ion implantation method includes irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied and irradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam.

Ion implantation method and ion implanter

An ion implantation method includes: irradiating a wafer arranged to meet a predetermined plane channeling condition with an ion beam; measuring a predetermined characteristic on a surface of the wafer irradiated with the ion beam; and evaluating an implant angle distribution of the ion beam by using a result of measurement of the characteristic. The wafer may be arranged so as to include a channeling plane parallel to a predetermined reference plane parallel to a reference trajectory direction of the ion beam incident on the wafer and not to include a channeling plane perpendicular to the reference plane and parallel to the reference trajectory direction.

Ion implantation method and ion implantation apparatus

An ion implantation method for scanning an ion beam reciprocally in an x direction and moving a wafer reciprocally in a y direction to implant ions into the wafer is provided. The method includes: irradiating a first wafer arranged to meet a predetermined plane channeling condition with the ion beam and measuring resistance of the first wafer irradiated with the ion beam; irradiating a second wafer arranged to meet a predetermined axial channeling condition with the ion beam and measuring resistance of the second wafer irradiated with the ion beam; and adjusting an implant angle distribution of the ion beam by using results of measuring the resistance of the first and second wafers.

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Ehime, Japan

Yoji Kawasaki