Nec Corporation

The Furukawa Electric Co., Ltd.

Nippondenso Co., Ltd.

Furukawa-sky Aluminum Corporation

Yoji Hirano

Koji Okada

Masahiro Ito

Masami Kojima

Takeyoshi Doko

Ryo Shoji

Goro Ueda

Hirokazu Yamaguchi

Toshiki Maezono

Takashi Kashima

Tokinori Onda

Hiroaki Takeuchi

An coating apparatus, wherein the apparatus applies a coating, onto a surface of an aluminum alloy member for a heat exchanger to be assembled by brazing, with a top-feed-type roll transfer system having at least three rolls, the coating being obtained by mixing into an organic binder a metal powder, a flux powder, a powder mixture thereof, or a compound containing a metal component and a flux component, wherein rotation directions of transfer rolls of the apparatus arranged above a surface to be coated of an aluminum alloy extruded member that moves in a horizontal direction, satisfy a relationship in which a rotation direction of a coated-metal roll for coating, which rotates in a direction opposite to a moving direction of the extruded member, and a rotation direction of a metal roll for adjusting an adhesion amount of the coating by contacting with the above roll, are opposite to each other; and a method of producing an aluminum alloy heat exchanger member using the apparatus; and an aluminum alloy heat exchanger member.

Coating apparatus for an aluminum alloy heat exchanger member, method of producing a heat exchanger member, and aluminum alloy heat exchanger member

An aluminum alloy with good cuttability, containing 3 to 6 mass % of Cu, 0.2 to 1.2 mass % of Sn, 0.3 to 1.5 mass % of Bi, and 0.5 to 1.0 mass % of Zn, with the balance being aluminum and inevitable impurities. A method for producing a forged article, in which the aluminum alloy is utilized. A forged article obtained by the method.

Aluminum alloy with good cuttability, method for producing a forged article, and forged article

In a differential amplifier formed with first and second transistors having emitters connected to each other via a resistor, an input signal is supplied to a base of the first transistor. On the other hand, to a base of the second transistor, an external constant voltage is supplied. In order to control the emitter current of the second transistor, a third transistor having a base supplied a control voltage is added. The emitter of the third transistor is commonly connected to the emitter of the second transistor in common, and a collector thereof is connected to a high power source voltage terminal. By varying at least one of the control voltage on the base of the third transistor and the constant voltage on the base of the second transistor, a gain of the circuit can be controlled. Also, the transistors are connected in single stage connection with respect to the power source, operation with the low power source voltage becomes possible.

Variable gain amplifier circuit with reduced power requirements

A typical aluminum alloy brazing material includesover 7.0 wt. % and not more than 12.0 wt. % of Si: over 0.1 wt. % and not more than 8.0 wt. % of Cu. over 0.05 wt. % and not more than 0.5 wt. % or Fe, further at least one kind selected from a group consisting of over 0.5 wt. % and not more than 5.5 wt. % of Zn. over 0.002 wt. % and not more than 0.3 wt % of In and over 0.002 wt. % and not more than 0.3 wt. % of Sn, and the balance of Al an inevitable impurities. A typical cladded aluminum alloy brazing sheet with a three-layer structure includes a brazing material, a core material comprising over 0.6 wt. % and not more than 2.5 wt. % of Si, over 0.5 wt. % and not more 2.5 wt. % of Cu, over 0.05 wt. % and not more than 2.0 wt. % of Mn, and the balance of Al and inevitable impurities, and a sacrificial material comprising at least one kind selected from a group consisting of over 0.5 wt. % and not more than 6.0 wt. % of Zn. over 0.002 wt. % and not more than 0.3 wt. % of In, and over 0.002 wt. % and not more than 0.3 wt. % of Sn, and the balance of Al and inevitable impurities, or comprises a core material cladded both sides thereof with the brazing material. By using the inventive brazing materials or brazing sheets, the brazing heating can be performed at a temperature of 570.degree. to 585.degree. C.

Aluminum alloy brazing material and brazing sheet adaptable for heat

A sample-and-hold circuit comprises an analog signal control circuit for supplying a potential of an input signal to one end of a hold capacitor, a first transistor having a base connected to the one end of the hold capacitor and operating in an emitter follower fashion, an amplifier having a second transistor having a base connected to an emitter of the first transistor, and a leak current compensating circuit including a third transistor having an emitter connected to a collector of the first transistor and a current mirror circuit for supplying to the base of the first transistor the same current as a base current of the third transistor.

Sample-and-hold circuit including a robust leakage current compensating

A current buffer circuit comprises an input terminal, an output terminal, a first transistor of a first conductivity type having a base connected to the input terminal and an emitter, and a second transistor of a second conductivity type having a base connected to the input terminal and an emitter. The buffer circuit further includes a third transistor of the second conductivity type having a base connected to the emitter of the first transistor, a collector connected to a first power supply terminal, and an emitter connected to the output terminal, a fourth transistor of the first conductivity type having a base connected to the emitter of the second transistor, a collector connected to a second power supply terminal, and an emitter connected to the output terminal, and a fifth transistor of the second conductivity type having a base connected to the collector of said fourth transistor, a collector connected to said output terminal, and an emitter connected to the second power supply terminal. The fifth transistor becomes conductive when the current flows from the output terminal to the second power supply terminal through the fourth transistor.

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Tokyo, Japan

Yoji Hirano