Kobelco Research Institute, Inc.

Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Yoichiro Yoneda

Toshihiro Kugimiya

Katsutoshi Takagi

Hitoshi Matsuzaki

Masaya Ehira

Kotaro Kitashita

Kenji Yamamoto

Toshiki Sato

Hiroshi Goto

Hiroshi Gotou

Yuki Iwasaki

Yasuo Nakane

Hidekazu Morimoto

The invention relates to an Al&#x2014;Ni&#x2014;La system Al-based alloy sputtering target where a total area of an Al&#x2014;Ni system intermetallic compound having an average particle diameter of 0.3 &#x3bc;m to 3 &#x3bc;m with respect to a total area of the entire Al&#x2014;Ni system intermetallic compound is 70% or more in terms of an area fraction, and a total area of an Al&#x2014;La system intermetallic compound having an average particle diameter of 0.2 &#x3bc;m to 2 &#x3bc;m with respect to a total area of the entire Al&#x2014;La system intermetallic compound is 70% or more in terms of an area fraction.

Al-Ni-La system Al-based alloy sputtering target

This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a ZnSnOphase as the main phase and contains an In/InO&#x2014;ZnSnOsolid solution wherein In and/or InOis solid-solved in ZnSnO, but a ZnInOphase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.

Oxide sintered compact and sputtering target

An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0&#xd7;10/mmor more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 &#x3bc;m or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.

Al-Ni-rare earth element alloy sputtering target

Al&#x2014;Ni-rare earth element alloy sputtering target

In a target for cathode discharging arc ion plating containing Al and Cr as an essential ingredient according to the invention, the thickness of the Al and Cr compound layer formed between Cr particles and Al contained in a target is 30 &#x3bc;m or less. Alternatively, the total for the peak intensities of Al&#x2014;Cr compound observed between diffraction angles between 10 to 80&#xb0; by X-ray diffractiometry according to &#x3b8;=2&#x3b8; method is 10% or less relative to the total for the peak intensities of Al, Cr and the Al&#x2014;Cr compound. Further, the relative density of the target is 92% or more. The target is capable of forming hard films of high quality while preventing not uniform movement of arc spots and suppressing formation of macro particles.

Target for cathode discharging arc ion plating and method of manufacturing the same

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Takasago, Japan

Yoichiro Yoneda