Fujitsu Corporation

Yoichiro Sakachi

Tetsuo Saito

Hironori Nishino

Satoshi Murakami

Kenji Maruyama

Hiroshi Daiku

Masaji Dohi

Satoshi Kawata

Tohru Okamoto

An apparatus for growing a mixed compound semiconductor layer utilizing three or more source gases. The apparatus includes a horizontal type reactor chamber. The reactor chamber includes a partition plate separating an upstream region of the reactor chamber into an upper region and a lower region. The upper and lower regions are joined together forming a growth region in a downstream region of the reactor chamber. First and second inlet ports are provided at an upstream end of the lower region for admitting first and second source gases, respectively. A third inlet port is provided at an upstream end of the upper region for admitting a third source gas. An outlet port is provided at a downstream end of the growth region for exhaust. A substrate stage is arranged in the growth region so that the substrate surface is exposed to the growth region and forms a smooth surface for allowing a laminar gas flow.

Apparatus for growing mixed compound semiconductor and growth method using the same

A semiconductor device having: a support substrate having an upper surface; a HgTe layer formed on the support substrate; and a HgCdTe layer directly formed on the HgTe layer. A semiconductor device of another type having: a support substrate having an exposed upper surface tilted from the (100) plane of a single crystal with a diamond structure by a certain angle, along a direction offset by an angle larger than 0.degree. and smaller than 45.degree. from the �011! direction in the (100) plane; a group III-V compound semiconductor layer formed on the support substrate; and a group II-VI compound semiconductor layer formed on the group III-V compound semiconductor layer.

Semiconductor devices and manufacturing method using II-VI compounds

A solution of precursor of a pyroelectric material, e.g. BaSrTiO.sub.3, is coated on a surface of a silicon wafer having an array of mesas corresponding to infrared sensor elements to be formed thereon, and the pyroelectric material precursor coating is dried and then is subjected to a heat treatment for converting thereof into a pyroelectric thin film (sol-gel process). The internal stress in the pyroelectric thin film formed as thick as 1 .mu.m by repeating the process concentrates in the region (groove) between the mesas, hence cracks occurring in the film in connection with the stress are limited within the region and the portions of the film on the mesas can be free from the cracks. The pyroelectric thin film in the groove is selectively removed. An infrared image sensing device comprising sensor elements of uniform characteristics and high reliability is provided.

Infrared detection device comprising a pyroelctric thin film and method

An infrared detection device has a substrate with a plurality of hollow mesas and a pyroelectric thin film formed on the surface having the mesas.

Infrared detection device comprising a pyroelectric thin film and method

A method or growing a mixed compound semiconductor layer comprises the following steps of: providing a reaction chamber comprising a rotatable substrate stage, a plurality of nozzles aligned in a line, the nozzle being arranged vertical to a substrate surface, and a mechanism for moving the substrate stage at least in the nozzle alignment direction and parallel to the substrate surface; disposing the substrate on the substrate stage which is rotated around its axis; flowing a mixed source gas into the reaction chamber through the nozzles, thereby a flow rate of the most reactive gas in the mixed source gas flowing through each nozzle being controlled to increase depending on a distance between the center axis of the substrate rotation and the nozzle; and heating the substrate. An apparatus for applying the above method comprises a particular feature for moving the substrate stage.

Growing community of inventors

Kawasaki, Japan

Yoichiro Sakachi