Mitsubishi Denki Kabushiki Kaisha

Yoichiro Ota

Yutaka Nagai

Tetsuya Yagi

Yutaka Mihashi

Kenji Ikeda

A chemical vapor deposition apparatus having a gas purifier for purifying a raw-material gas such as AsH.sub.3 or PH.sub.3 gas, the gas purifier being constructed as the combination of an organometal and a molecular sieve. Gas of AsH.sub.3, PH.sub.3 or the like is introduced into the organometal whereby impurities such as H.sub.2 O or O.sub.2 contained in the raw-material gas (AsH.sub.3, PH.sub.3, etc) are removed. Further, organometal vapor occured from gas purifier is removed by the molecular sieve.

Chemical vapor deposition apparatus

A semiconductor laser device includes an active layer, a pair of different conductivity type cladding layers having a wider energy band gap than that of the active layer, sandwiching the active layer. One of the cladding layers has a stripe ridge or stripe groove. A high dopant concentration diffusion region having the same conductivity type as that of the cladding layer is disposed on the stripe ridge or the stripe groove. Therefore, a refractive index difference is provided in the two directions transverse to the length of the resonant cavity and a low astigmatism. Furthermore, because the light confinement is strengthened, the light emission efficiency is also enhanced.

Semiconductor laser device

A semiconductor laser device for a laser printer in which a reflection film having reflectance in a range of 45 to 65% is provided on a laser output facet for outputting a laser output beam.

Semiconductor laser including a reflection film

A method for producing a semiconductor laser including successively growing at least two semiconductor layers simultaneously on a substrate, the finally grown layer not containing aluminum and the layer grown immediately before the finally grown layer containing aluminum, etching a stripe groove through the finally grown layer to expose part of the semiconductor layer containing aluminum, growing a second semiconductor layer not including aluminum on the finally grown layer and the exposed surface of the semiconductor layer containing aluminum, and growing a semiconductor layer including aluminum on the second semiconductor layer not containing aluminum.

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Itami, Japan

Yoichiro Ota