Hitachi Astemo Ltd.

Hitachi, Ltd.

Hitachi Automotive Systems, Ltd.

Yoichiro Kobayashi

Keishi Komoriyama

Yasuo Shima

Shinichirou Wada

Hiroyasu Yoshizawa

Masato Kita

Minoru Migita

Tomohiko Yano

Masahito Sonehara

Masaki Yoshinaga

Katsumi Ikegaya

Toshio Shinomiya

Noriyuki Fujii

Hiroshi Kikuchi

Mitsuhiko Watanabe

Kenji Maio

Shinya Kajiyama

Takao Okazaki

Kazuo Yamakido

Takahiro Kawata

Kiyotaka Kanno

Yukihito Ishihara

Yuko Tamba

Takayuki Oshima

Katsuya Sonoyama

Masanori Otsuka

Chihiro Mochizuki

Ichiro Somada

Norimitsu Nishikawa

Yasuyuki Ookuma

Koji Shibata

Yu Kawagoe

There is provided a power saving and highly reliable semiconductor device on which a switching power supply circuit and a driver circuit are mounted together, and which can perform appropriate control by the driver circuit even when a battery terminal is disconnected while reducing power loss in the entire semiconductor device. The semiconductor device includes: a first terminal which is connected to a battery power source; a switching power supply circuit which steps down a battery voltage input from the first terminal; a second terminal which is connected to a switching power source different from the battery power source; a regulator circuit which steps down a voltage input from the second terminal; and a predriver circuit which is connected to the regulator circuit.

Semiconductor device, control device for transmission, and control method of electronic control unit

A load drive device that drives and controls an inductive load based on a PWM signal from a microcomputer is provided, and the load drive device has excellent reliability and responsiveness capable of quickly detecting disconnection of the inductive load. The load drive device includes a microcomputer and a driver circuit that drives an inductive load by a pulse width modulation signal of a constant cycle based on a control command from the microcomputer, in which the driver circuit includes a current monitoring circuit that monitors a current flowing through the inductive load, and a disconnection diagnosis circuit that detects disconnection of the inductive load based on a current value detected by the current monitoring circuit, and the disconnection diagnosis circuit obtains a change amount of a current value detected by the current monitoring circuit, and when the change amount is equal to or less than a predetermined threshold, determines that the inductive load is disconnected and notifies the microcomputer of the disconnection.

Load drive device and method for controlling electronic control device

In a semiconductor device including a current mirror circuit, a highly reliable semiconductor device that reduces a variation in a mirror ratio of the current mirror circuit and suppresses a change with time in a pairing property of elements can be provided.

Mirror circuit devices with wide wirings

Poor opening is detected with certainty and reliability with respect to a ground line of an integrated circuit device regardless of the connection state of a load and the operating state of a drive circuit. In an integrated circuit device, a drive circuitswitches between conduction and interruption of a load current using switch elementsand. The ground lineis grounded via the GND terminalto the common ground provided outside the integrated circuit deviceand is connected to the drive circuit. The ground lineis grounded to the common ground via the GND terminaland is connected to the control circuit. The diagnostic current supply circuitsupplies a predetermined diagnostic current to the ground line. The rectifying elementsandare connected between the ground lineand the ground line. The diagnostic circuitmeasures the potential difference between the ground lineand the ground lineand compares the potential difference with the predetermined comparison voltageto diagnose the grounding state of the ground line

Integrated circuit device

Provided is a power conversion device capable of observing a chip temperature with high accuracy without increasing a cost of the power conversion device mounted with a current sense element for observing a main current of a power device. A main control MOSFET, a current MOSFET, and a diodeconnected to a source electrodeof the main control MOSFETand a source electrodeof the current MOSFETare mounted in a chip of a power device, a temperature measurement circuitis connected to the source electrodeof the current MOSFET, and when the main control MOSFETis in an off state, a forward current (I) is caused to flow through the diode, and an anode potential is observed to measure the chip temperature.

Power conversion device configured to observe chip temperature

Achieved is a load drive device capable of suppressing local concentration of temperature at the time of absorbing a counter electromotive force of an inductive load while suppressing a size of a power transistor. The load drive device includes a first transistor connected between a first control electrode and an inductive load. Further, the load drive device includes an active clamp circuit that becomes conductive when a terminal voltage of a second control electrode between the first transistor and the inductive load exceeds a threshold. Furthermore, the load drive device includes a second transistor connected to the second control electrode and connected in parallel to the first transistor.

Load drive device

In a semiconductor device equipped with a current mirror circuit, a highly reliable semiconductor device capable of suppressing a change in a mirror ratio of the current mirror circuit over time is provided. A current mirror circuit that includes a first MOS transistor and a plurality of MOS transistors paired with the first MOS transistor, and a plurality of wiring layers formed on an upper layer of the MOS transistor are provided. The plurality of wiring layers are arranged such that wiring patterns have the same shape within a predetermined range from an end of a channel region of each of the first MOS transistor and the plurality of MOS transistors.

Semiconductor device and in-vehicle electronic control device using the same

Provided is a current control device capable of continuing feedback control for a solenoid in normal feedback control while preventing occurrence of an unintended valve operation due to flow of a reverse current.

Current control device for control of supply current with low-side and high-side switch elements and duration measurement

Provided is a novel power conversion device that enables estimation of a temperature of a power device without using a temperature sensing diode and can accurately estimate a temperature and a current of a current sensing element that observes a main current. A measurement voltage (Vref) is applied between source terminals (and) of a main control elementand a current sensing elementin a state in which the main control elementand the current sensing elementare turned off, and a temperature of a power deviceis estimated from a current (Ib) flowing between the source terminals (and) of the main control elementand the current sensing elementat the time of the application by using the fact that a resistance value of a semiconductor substrate between the source terminals of the main control elementand the current sensing elementhas temperature dependency.

Power conversion device

To prevent deterioration of current detection accuracy due to a difference in deterioration between a main MOS and a sense MOS. The load drive device includes a main MOS () for supplying a load current to a load, a sense MOS () to be used for detection of the load current, and an equalizer circuit () and a switch () which are provided in parallel between the source terminal of the main MOS and the source terminal of the sense MOS. The drain terminal of the main MOS and the drain terminal of the sense MOS have a common connection, and when a current is detected, the terminal voltage of the main MOS and the terminal voltage of the sense MOS are equalized by the equalizer circuit, and the switch is opened. When a current is not detected, the equalizer circuit is stopped and the switch short-circuits the source terminal of the main MOS and the source terminal of the sense MOS.

Load drive device and transmission drive system

There is a problem that an area of a principal current cell is reduced by an area of a bonding pad wiring layer for a sub-cell. A source electrodeof a current detection cellis electrically connected to a bonding pad wiring layerformed on an interlayer insulating filmvia a wiring layer contact. The bonding pad wiring layeris formed with respect to a source electrodeof a principal current cellso as to cover a part of the source electrodevia the interlayer insulating film. As a result, the source electrodeis miniaturized, and a size of the source electrodeis made substantially equal to a size of the current detection cell. Therefore, the current detection celland the principal current cellare disposed close to each other.

Semiconductor device including sub-cell disposed at chip center

The present invention maintains the accuracy of a reference current used in a functional circuit. Disclosed is a current generator circuit including a functional circuit and a diagnostic circuit. The functional circuit uses a reference current. The diagnostic circuit diagnoses the reference current in accordance with a comparison result obtained from comparison between the period of a periodic signal generated based on the reference current and the period of a reference clock inputted from the outside.

Current generator circuit and diagnostic circuit

Provided is an internal combustion engine ignition device capable of preventing an output signal level of a drive circuit from changing sharply when shifting from a normal ignition operation mode to a protection operation mode while reducing the cost of dedicated components and the like. An internal combustion engine ignition device of the present invention includes a first differential circuit for outputting a drive signal in a first mode and a second differential circuit for outputting a drive signal in a second mode, where the first differential circuit and the second differential circuit each include a transistor and are configured such that a drive current for supplying the drive signal flows through the transistor which is common between the first mode and the second mode.

Internal combustion engine ignition device

To provide an ignition control device of an internal combustion engine capable of reducing the number of adjustment steps required for adjustment such as matching of a MOS gate voltage or the like without being affected by device variation. A detection voltage is generated on the basis of a primary current flowing through a current detection resistor having a positive temperature dependent characteristic. A reference voltage is generated by a potential difference between a base and an emitter of a first bipolar transistor circuit and a multiple type second bipolar transistor circuit in which a plurality of bipolar transistors are connected in parallel, and a resistance value of a first resistor connected to the emitter side of the plurality of the bipolar transistor circuit, on the basis of a current having a positive temperature dependent characteristic similar to the current detection resistor.

Ignition control device and reference voltage adjustment method of ignition control device

It is made possible to control ignition appropriately. An ignition devicefor an internal combustion engine includes a spark coilincluding: a primary side coilconnected to a direct current power supplyand a secondary side coilmagnetically connected to the primary side coiland connected to an ignition plug; a switch elementthat performs switching between energization and interruption of primary current Ito the primary side coil; and a switch element controlling circuitthat controls the switch elementon the basis of an ignition controlling signalsupplied from an ECU. A turn-on delay adjustment circuitthat delays a control timing of the switch elementis disposed between the ECUand the switch elementsuch that first resonance noise generated due to interruption of the primary current Ito the primary side coilis reduced.

Growing community of inventors

Ome, Japan

Yoichiro Kobayashi