Toyota Jidosha Kabushiki Kaisha

Nippon Steel Sumitomo Metal Corporation

Yoichiro Kawai

Hiroshi Suzuki

Nobuhiro Okada

Kazuhiko Kusunoki

Kazuhito Kamei

Akinori Seki

Hironori Daikoku

Katsunori Danno

Motohisa Kado

Hidemitsu Sakamoto

Nobuyoshi Yashiro

Hiroaki Saitoh

Tomokazu Ishii

Kouji Moriguchi

An apparatus for SIC single crystal has an induction heating control unit such that frequency f (Hz) of alternating current to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a crucible side wall by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SIC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius:(1&#x2212;)&#xd7;2/&#x3e;1.5&#x2003;&#x2003;(1) where, D1 is defined by Formula (2) and D2 by Formula (3):1=503292&#xd7;(1/())&#x2003;&#x2003;(2)2=503292&#xd7;(1/())&#x2003;&#x2003;(3); &#x3c3;c is electric conductivity (S/m) of the sidewall, &#x3c3;s is electric conductivity (S/m) of the SiC solution; &#x3bc;c is relative permeability of the sidewall, and &#x3bc;s is relative permeability of the SIC solution.

Manufacturing apparatus of SiC single crystal and method for manufacturing SiC single crystal

A method of production of a SiC single crystal uses the solution method to prevent the formation of defects due to seed touch, i.e., causing a seed crystal to touch the melt, and thereby cause growth of a SiC single crystal reduced in defect density. According to the method, a SiC seed crystal touches a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal. The method includes making the SiC seed crystal touch the melt, and then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.

Method of production of sic single crystal

Growing community of inventors

Okazaki, Japan

Yoichiro Kawai