Canon Kabushiki Kaisha

Yoichiro Handa

Tomohiro Yamada

Hajime Ikeda

Satoru Nishiuma

Yoichi Wada

Takeshi Imamura

Junji Iwata

Norihiko Utsunomiya

Ginjiro Toyoguchi

Junta Yamamichi

Miki Ogawa

Yukio Araoka

Daichi Seto

Hideyuki Ito

Masahiro Kobayashi

Takanori Watanabe

Toshihiko Ouchi

Ryo Kuroda

Ryota Sekiguchi

Taro Kato

Keisuke Ota

Hiromasa Tsuboi

Yoshiaki Takada

Norihhiko Utsunomiya

A photoelectric conversion member included in a photodiode PDis disposed at the position overlapping with a section B, a photoelectric conversion member included in a photodiode PDis disposed at the position overlapping with a section B, and a photoelectric conversion member included in the photodiode PDis disposed at the position overlapping with a section B. A plurality of electrodeseach forming a Metal-Insulator-Semiconductor (MIS) structure together with a semiconductor layeris disposed on a front surface FS of the semiconductor layer. At least one of the plurality of electrodesoverlaps with at least one of eight sections Bto B

Semiconductor apparatus and device

A photoelectric conversion device includes a first pixel including a photoelectric converter, a first node to which charge is transferred from the photoelectric converter, and a first transistor that resets a voltage of the first node, and configured to output a first signal in accordance with a voltage of the first node, a second pixel including a second node to which a predetermined voltage is supplied and a second transistor that resets a voltage of the second node, and configured to output a second signal in accordance with a voltage of the second node; and a control line connected to the first transistor and the second transistor. The first transistor resets the first node to a first voltage, and the second transistor resets the second node to a second voltage having a smaller amplitude than the first voltage.

Photoelectric conversion device and photoelectric conversion system

A photoelectric conversion apparatus includes a semiconductor substrate, first and second micro lenses, a first filter with a transmittance of infrared light, and a second filter with a transmittance of visible light. At least one photoelectric conversion portion disposed so as to overlap the first filter in a planar view and a plurality of photoelectric conversion portions disposed so as to overlap the second filter in the planar view each include a first semiconductor region and a second semiconductor region. An impurity concentration of at least a part of the second semiconductor region of the at least one photoelectric conversion portion is lower than an impurity concentration of a portion in the second semiconductor regions of the plurality of photoelectric conversion portions that is disposed at the same depth as the at least a part of the second semiconductor region.

Photoelectric conversion apparatus

According to one aspect of the invention, provided is a solid state imaging device having a pixel including a photoelectric conversion portion provided in a semiconductor substrate. The photoelectric conversion portion includes first and second charge accumulation region of a first conductivity type provided at a first depth of the semiconductor substrate and spaced apart from each other by a first gap, and first and second semiconductor region of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and extend over the first charge accumulation region, the first gap, and the second charge accumulation region in a planar view. At the second depth, an impurity concentration of the second conductivity type in a region under the first gap is higher than an impurity concentration of the second conductivity type in a region under the first and second charge accumulation regions.

Solid state imaging device and manufacturing method thereof

A method of manufacturing an imaging device, including a first buried diode including a first semiconductor region and a second semiconductor region and a second buried diode including a third semiconductor region and a fourth semiconductor region, includes implanting first impurity ions of a first conductivity type into a first region and a third region between the first region and a second region, and implanting second impurity ions of the first conductivity type into the second region and the third region, wherein the first semiconductor region is formed by implanting the first impurity ions, the third semiconductor region is formed by implanting the second impurity ions, and a fifth semiconductor region having a higher impurity concentration than the first and the second semiconductor regions is formed in the third region by implanting the first and second impurity ions.

Imaging device and method of manufacturing imaging device

A solid-state imaging device includes a plurality of pixels arranged in a matrix, wherein one pixel of the plurality of pixels is arranged in one unit pixel region of a plurality of unit pixel regions, a plurality of sub vertical output lines, each of which outputs pixel signals from the plurality of pixels in the same pixel column, and a plurality of block select circuits provided in one-to-one correspondence with the plurality of sub vertical output lines. A load capacitance connected to a main vertical output line is reduced by connecting the plurality of sub vertical output lines and the main vertical output line via the plurality of block select circuits. This makes high-speed pixel signal readout possible.

Solid-state imaging device and imaging system

Solid-state imaging device and imaging system having a plurality of unit pixel regions

An embodiment provides an imaging device including a pixel that includes a first photoelectric conversion portion, a second photoelectric conversion portion, a first transfer transistor, a second transfer transistor, and a floating diffusion portion. The first transfer transistor transfers a signal charge in the first photoelectric conversion portion to the floating diffusion portion. The second transfer transistor transfers a signal charge in the second photoelectric conversion portion to the floating diffusion portion. A potential at the first photoelectric conversion portion for the signal charge is higher than a potential at the second photoelectric conversion portion for the signal charge.

Imaging device and imaging system

An imaging device includes first and second photoelectric conversion portions, a charge holding portion, first and second transfer transistors, and an amplifier portion, wherein in a first control operation, from a state in which the first and the second transfer transistors are off, the first transfer transistor is turned on while the second transfer transistor remains off, in a second control operation, the first and the second transfer transistors are being on, and a difference between a control voltage provided in the first control operation to the first transfer transistor to turn on and a control voltage provided to the first transfer transistor to turn off is smaller than difference between a control voltage provided in the second control operation to the first transfer transistor to turn on and the control voltage provided to the first transistor to turn off.

Imaging device, imaging system, and method for driving imaging device

A chemical sensor element contains a resonator having a first reflector in which particles of a fine metal structure are arranged two-dimensionally and periodically is counterposed with interposition of a dielectric layer to a second reflector, wherein the resonance wavelength of a resonator in which the entire of the first reflector is replaced by a metal thin film having the same thickness as the metal fine structure is different from the surface plasmon resonance wavelength induced in the metal fine structure; and the mode of the surface plasmon resonance excited in the metal fine structure is coupled with the mode of the resonator in which the entire of the first reflector is replaced by the metal thin film.

Chemical sensor element, sensing apparatus, and sensing method

An optical element includes a plurality of optical filters having different characteristics. The element includes a first optical filter including a first metal-structure group including first metal structures periodically arranged in an in-plane direction of a substrate surface and a second optical filter including a second metal-structure group including second metal structures periodically arranged in the in-plane direction, the second metal-structure group exhibiting a plasmon resonance condition different from that of the first metal-structure group. The optical distance between the first metal structures adjacent to each other is in a range of 0.75 to 1.25 times the optical distance between the second metal structures adjacent to each other.

Optical element, image sensor including the optical element, and image pickup apparatus including the image sensor

An optical phase controller includes an optical phase control element so that a phase of incident light applied to the optical phase control element is controlled. The optical phase control element includes a metal structure having anisotropy in a first direction and a second direction perpendicular to the first direction within an electric-field vibration plane of the incident light, the wavelength of the incident light includes a plasmon resonance wavelength possessed by the metal structure, and the incident light is linearly polarized light or elliptically polarized light simultaneously having polarized components in the first direction and the second direction perpendicular to the first direction.

Optical phase controller and optical phase control method

A target substance-detecting apparatus for detecting a target substance in an analyte comprises a detecting device having a substrate and metal structures capable of causing a plasmon resonance arranged thereon, an illumination optical system for illuminating an incident light containing a polarization component polarized in a first direction onto the detecting device to cross the arranged metal structures, a light-receiving device for receiving light containing the polarization component polarized in the first direction and transmitted through or reflected by the detecting device, and an arithmetic unit for calculating on signals from the light-receiving device to analyze a characteristic of the analyte; the metal structures arranged at first intervals not more than 1/10 of a plasmon resonance wavelength in lines in the first direction and at second intervals not less than &#xbc; of the plasmon resonance wavelength and not more than the wavelength in lines parallel in a second direction.

Target substance-detecting apparatus and target substance-detecting method

Even when only a few antigens exist in a specimen, a change in a dielectric constant and a change in an optical spectrum accompanied thereto in the periphery of a conductive member are made larger, so that sensing at high sensitivity can be performed. A structure including a protrusion including a dielectric material protruded on a substrate and a conductive member provided on a first surface of the protrusion, in which the maximum value of the cross-sectional area in the cross-section in parallel with a first surface of the conductive member is larger than the area of the first surface.

Sensor element structure, sensor element array, and manufacturing method of sensor element array

The present invention provides a detecting element which can stably detect a substance with high sensitivity; a detecting device therefor; and a detecting method therefor. The detecting element and the detecting device according to the present invention have a plurality of planes having a plurality of mutually-separated metallic structures arranged thereon. The detecting method according to the present invention includes making a detecting light irradiate the detecting element so that the light can intersect a plurality of the planes. Thereby, the detecting light is more frequently absorbed in the vicinity of the metallic structure and the detecting device can stably detect a slight change of a spectrum originating from a trace change of a refractive index occurring in the vicinity of the metallic structure, with the high sensitivity.

Growing community of inventors

Tokyo, Japan

Yoichiro Handa