Tokyo Electron Limited

Yoichiro Chiba

Daisuke Suzuki

Atsushi Endo

Kazuhide Hasebe

Hiroki Iriuda

A processing apparatus includes: a processing container having a substantially cylindrical shape and provided with an exhaust slit on a side wall; and a plurality of gas nozzles extending in a vertical direction along an inside of the side wall of the processing container, disposed symmetrically with respect to a straight line connecting a center of the processing container and a center of the exhaust slit, and each configured to eject a same processing gas into the processing container.

Processing apparatus and processing method

A method of growing a crystal in a recess in a substrate on which an insulating film having the recess is formed, includes: forming a first film on the insulating film at a thickness as not to completely fill the recess; etching the first film by an etching gas to remain the first film only in a bottom portion of the recess; annealing the substrate such that the first film in the bottom portion is modified into a crystalline layer; forming a second film on the insulating film and a surface of the crystalline layer at a thickness as not to completely fill the recess; annealing the substrate such that the second film is crystallized from the bottom portion through a solid phase epitaxial growth to form an epitaxial crystal layer; and etching and removing the second film remaining on the substrate by an etching gas.

Method of growing crystal in recess and processing apparatus used therefor

There is provided a method of filling a recess with a germanium-based film composed of germanium or silicon germanium in a substrate to be processed on which an insulating film having the recess formed therein is formed, the method including: forming a silicon film on a surface of the insulating film at a thickness as not to completely fill the recess; subsequently, etching the silicon film such that the silicon film remains only in a bottom portion of the recess; and subsequently, selectively growing the germanium-based film composed of germanium or silicon germanium on the silicon film remaining in the bottom portion of the recess and selectively filling the recess with the germanium-based film.

Growing community of inventors

Nirasaki, Japan

Yoichiro Chiba