Canon Kabushiki Kaisha

Yoichi Wada

Masahiro Kobayashi

Hajime Ikeda

Fumihiro Inui

Tatsuhito Goden

Keisuke Ota

Toshinori Hasegawa

Daisuke Yoshida

Noriyuki Shikina

Hiromasa Tsuboi

Yoichiro Handa

Yasushi Iwakura

Junji Iwata

Ginjiro Toyoguchi

Michiko Johnson

Daichi Seto

Kentaro Tsukida

Hideyuki Ito

Akira Okita

Nobuhiko Sato

Takeshi Akiyama

Koichiro Iwata

Tomoyuki Noda

Taro Kato

Yu Arishima

Masaki Kurihara

Toshiyuki Ogawa

Shinya Igarashi

Nabuhiko Sato

A photoelectric conversion apparatus has a first filter arranged so as to correspond to a first photoelectric conversion unit and a second filter arranged so as to correspond to a second photoelectric conversion unit. The photoelectric conversion apparatus has a first processing unit configured to process an output signal from the first photoelectric conversion unit and having a first learned model, and a second processing unit configured to process an output signal from the second photoelectric conversion unit and having a second learned model different from the first learned model.

Photoelectric conversion apparatus

An imaging arrangement comprising: a plurality of pixels arranged in a matrix; and a signal processing arrangement. A first and a second line of the matrix each comprise a light-receiving pixel and a reference pixel, the light-receiving pixels each receive incident light and output a light signal based on the incident light, and each reference pixel outputs a pixel signal for forming an address signal. The processing arrangement provides a first address signal and a second address signal, wherein: the first address signal indicates the position of the first line and comprises a signal value based on the pixel signal from the first line; and the second address signal indicates the position of the second line and comprises a signal value based on the pixel signal from the second line; and the signal value of the first address signal is different to the signal value of the second address signal.

Imaging apparatuses, systems, and moving imaging objects

A photoelectric conversion device includes a first pixel including a photoelectric converter, a first node to which charge is transferred from the photoelectric converter, and a first transistor that resets a voltage of the first node, and configured to output a first signal in accordance with a voltage of the first node, a second pixel including a second node to which a predetermined voltage is supplied and a second transistor that resets a voltage of the second node, and configured to output a second signal in accordance with a voltage of the second node; and a control line connected to the first transistor and the second transistor. The first transistor resets the first node to a first voltage, and the second transistor resets the second node to a second voltage having a smaller amplitude than the first voltage.

Photoelectric conversion device and photoelectric conversion system

An imaging device is provided in which a shield wiring is arranged between signal lines of a first set out of a plurality of signal lines, and, in which signal lines of a second set out of a plurality of signal lines are adjacent to each other.

Imaging device, imaging system, and moving object

In an imaging apparatus, each of a plurality of pixels has a first semiconductor area having a first conductivity type, a floating diffusion area, and a transfer gate positioned between the first semiconductor area and the floating diffusion area. In a part of the plurality of pixels, a partial area of the first semiconductor area receives a potential supplied from a contact. The part of the plurality of pixels further has a second semiconductor area having a second conductivity type positioned between the partial area and the transfer gate in a planar view.

Imaging apparatus, imaging system, moving object, and manufacturing method for imaging apparatus

A third line that supplies a first potential to a first semiconductor region of a first detection pixel and a fourth line that supplies a second potential to the first semiconductor region of a second detection pixel are provided. An interval between a partial line of the third line and a partial line of the fourth line is longer than an interval between a partial line of a first line and a partial line of a second line which extend along the partial line of the third line and the partial line of the fourth line.

Imaging sensor, imaging system, and moving body

A photoelectric conversion apparatus includes a semiconductor layer having a front surface and a back surface and in which a plurality of photoelectric conversion portions is provided between the front surface and the back surface, a wiring structure arranged on the front surface side of the semiconductor layer, a separation portion arranged between the plurality of photoelectric conversion portions and formed by a trench continuing from the back surface, a first light shielding portion arranged above the semiconductor layer on the back surface side so as to overlap the separation portion, and a second light shielding portion arranged above the semiconductor layer on the back surface side so as to face the first light shielding portion via a region located above at least one photoelectric conversion portion among the plurality of photoelectric conversion portions.

Photoelectric conversion apparatus having light shielding portions above semiconductor layer on back surface side and equipment

An imaging device is provided in which, at a position where a line passes a pixel in a first row along a second direction intersecting with a first direction, a first signal line and a second signal line are arranged at overlapping positions, in which, at a position where a line passes a pixel in a second row along the second direction, the first and the second signal lines are arranged at non-overlapping positions, and, in which, at a position where a line passes a pixel in a third row along the second direction, the first and the second signal lines are arranged at overlapping positions.

According to one aspect of the invention, provided is a solid state imaging device having a pixel including a photoelectric conversion portion provided in a semiconductor substrate. The photoelectric conversion portion includes first and second charge accumulation region of a first conductivity type provided at a first depth of the semiconductor substrate and spaced apart from each other by a first gap, and first and second semiconductor region of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and extend over the first charge accumulation region, the first gap, and the second charge accumulation region in a planar view. At the second depth, an impurity concentration of the second conductivity type in a region under the first gap is higher than an impurity concentration of the second conductivity type in a region under the first and second charge accumulation regions.

Solid state imaging device and manufacturing method thereof

An imaging device comprising a plurality of pixels and a processing unit. The plurality of pixels includes (i) a light-receiving pixel arranged to receive incident light and output a light signal based on the incident light, and (ii) a reference pixel arranged to output a pixel signal for configuring a failure detection signal. The processing unit is arranged to determine whether or not the failure detection signal is correct based on abnormality information indicating the abnormality of the reference pixel.

Imaging device, imaging system, moving body, and control method

A method of manufacturing an imaging device, including a first buried diode including a first semiconductor region and a second semiconductor region and a second buried diode including a third semiconductor region and a fourth semiconductor region, includes implanting first impurity ions of a first conductivity type into a first region and a third region between the first region and a second region, and implanting second impurity ions of the first conductivity type into the second region and the third region, wherein the first semiconductor region is formed by implanting the first impurity ions, the third semiconductor region is formed by implanting the second impurity ions, and a fifth semiconductor region having a higher impurity concentration than the first and the second semiconductor regions is formed in the third region by implanting the first and second impurity ions.

Growing community of inventors

Yokohama, Japan

Yoichi Wada