Hoya Corporation

Yoichi Usui

Kazuhiro Hamamoto

Shinichi Ishibashi

A conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 &#x3bc;m&#xd7;1 &#x3bc;m of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA&#x2212;BA)/(BD&#x2212;BD) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.

Conductive film coated substrate, multilayer reflective film coated substrate, reflective mask blank, reflective mask, and semiconductor device manufacturing method

A conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 &#x3bc;m&#xd7;1 &#x3bc;m of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA-BA)/(BD-BD) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.

Provided is a conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 &#x3bc;m&#xd7;1 &#x3bc;m of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA&#x2212;BA)/(BD&#x2212;BD) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.

A reflective mask and a reflective mask blank that can form a fine mask pattern with high accuracy in shape, achieve a sufficient contrast in a pattern inspection, and enable a pattern transfer with high accuracy. On a substrate (), a multilayer reflective film () for reflecting an exposure light, a buffer layer (), and an absorber layer for absorbing the exposure light are successively deposited in this order. This absorber layer has a layered structure composed of an uppermost layer () and a lower layer () other than it. The uppermost layer () exhibits a reflectance of 20% or less with respect to a light having an inspection wavelength for use in an inspection of a pattern formed in the absorber layer and further is formed of an inorganic material having a resistance against an etching condition in forming a pattern in the lower layer.

Growing community of inventors

Tokyo, Japan

Yoichi Usui