Tokyo Electron Limited

Fujitsu Corporation

Kabushiki Kaisha Toshiba

Yoichi Ueda

Mitsuaki Komino

Satoru Kawakami

Youichi Deguchi

Takashi Sasaki

Satoshi Kaneko

Haruo Okano

Toshihisa Nozawa

Tsutae Shinoda

Isahiro Hasegawa

Kenji Ishikawa

Yukimasa Yoshida

Shizuo Andoh

Hideo Yamashita

Masato Hori

Koichi Kazama

Kenji Murase

Yoshinori Miyashita

Akira Oshima

Sei Sato

Kumiko Maruo

Taichi Fugita

Kouichi Kazama

Tomoyuki Unotoro

Noriyasu Suzuki

Yasunari Shirouchi

An xDSL transceiver comprising a transmission unit for transmitting a DMT-modulated signal through a subscriber line as a transmission path and a receiving unit for receiving the DMT-modulated signal from the subscriber line. The xDSL transceiver further comprises an echo signal suppression unit for suppressing the echo signal from the transmission unit to the receiving unit by matching the phase between the frame of the transmission signal and the frame of the receiving signal.

xDSL transceiver

A high-frequency signal output from an active radio transmitter is input to a phase comparator via a standby radio receiver. A transmitting data processing unit delays a frame data signal and a clock signal by a predetermined time and inputs them to the phase comparator. The phase comparator compares the phases of the two frame data signals and the two clock signals, and the delay time adjuster in the active radio transmitter adjusts the phases of the frame data signal and the clock signal input from the data processing unit so that the phases of both data signals and clock signals are coincident with each other. Similarly, the delay time adjuster in the standby radio transmitter adjusts the phases of the data signal and the clock signal input from the data processing unit. In this manner, the delay times (signal phases) of the active radio transmitter and the standby radio transmitter are automatically adjusted during the operation of a radio equipment.

Radio equipment

Disclosed is a plasma processing apparatus, comprising a first electrode on which an object to be processed is to be disposed, a second electrode arranged to face the first electrode, a high frequency power supply for supplying a high frequency power between the first and second electrodes, a processing gas supplying mechanism for forming a plasma into a region between the first and second electrodes, and a bias potential detecting mechanism for detecting the bias potential of the first electrode. The bias detecting mechanism has a detecting terminal positioned in the vicinity of the object to be processed.

Plasma processing apparatus

A susceptor of a plasma etching apparatus is arranged on a heater fixing frame incorporating a heater. The fixing frame is arranged on a cooling block containing liquid nitrogen. A boundary clearance is formed between the fixed frame and the cooling block and on a heat transfer path. A method of controlling the temperature of the susceptor includes an initialization mode, an idle mode following the initialization mode, process and maintenance modes selectively following the idle mode. The initialization mode includes the steps of filling the boundary clearance with a heat transfer gas and observing a change in temperature of the susceptor caused by cold transferred from the cooling block. The idle mode is executed after the temperature of the susceptor reaches a predetermined temperature. The idle mode includes the step of exhausting the boundary clearance to set it in a vacuum state to sever the heat transfer path. The process mode includes the steps of filling the boundary clearance with the heat transfer gas and processing a semiconductor wafer on the susceptor. The maintenance mode includes the steps of keeping the vacuum state of the boundary clearance to sever the heat transfer path and performing maintenance.

Method of controlling temperature of susceptor

The present invention provides a plasma process apparatus wherein RF power is applied to a process gas, thereby to convert the gas into plasma for processing an object, the apparatus having a process chamber, an upper electrode located in the process chamber and having a gas-supplying section for supplying a process gas, a lower electrode located in the process chamber, having a cooling means, and opposing the upper electrode, for supporting an object, and RF power supplying means electrically connected to the lower electrode, protruding from the process chamber and connected to a RF power supply, for supplying RF power between the upper and lower electrodes, wherein the RF power supplying means includes, an outer conductive pipe surrounding the inner conductive rod and spaced therefrom, and a fixing member inserted between the inner conductive rod and the outer conductive pipe and having concaves and convexes, the inner conductive rod and the outer conductive pipe being electrically connected to an RF power supply source.

Plasma process apparatus

A plasma etching apparatus includes a wafer-mount arranged in an aluminum-made process chamber. The wafer-mount comprises an aluminum-made susceptor, a heater fixing frame and a cooling block, and a ceramics heater is attached to the heater fixing frame. A bore in which liquid nitrogen is contained is formed in the cooling block. The cold of the cooling block is transmitted to a wafer on the susceptor to cool it while it is being etched. The ceramics heater adjusts the temperature of the wafer cooled. Liquid nitrogen is circulated in the bore in the cooling block, passing through coolant passages defined by a pair of joint devices which connect the bottom of the process chamber and the cooling block to each other. Each of the joint devices includes an upper conductive connector secured to the cooling block, a lower conductive connector secured to the chamber bottom, and an electrical- and thermal-insulating ring for connecting both of the connectors to each other while keeping them electrical- and thermal-insulated.

A semiconductor wafers processing apparatus comprises a susceptor for mounting and fixing a wafer thereon, a cooling jacket for cooling the susceptor, a process chamber whose wall encloses the susceptor and the cooling jacket, an O-ring for shielding from process atmosphere in the process chamber a clearance formed between an inner cylinder of the process chamber wall and the outer circumferences of the susceptor and the cooling jacket, and an exhaust pump for exhausting gas in the clearance. It further comprises load lock chambers for carrying the wafer into and out of the process chamber, and heat insulating members interposed between those faces of the process chamber and each of the load lock chambers which are opposed to each other. The process chamber wall can be heat-insulated from the susceptor and the cooling jacket by the exhausted clearance and the process chamber can be heat-insulated from each of the load lock chambers by the heat insulating members.

Apparatus for forming reduced pressure and for processing object

An AC plasma display panel with a coated thin film dielectric layer on the electrodes has a structure which includes double layers of chromium (Cr) and copper (Cu). After three metal layers of chromium, copper, and chromium are formed on a glass substrate, these three metal layers are subjected to patterning with the desired electrode pattern in such a fashion as to eliminate the upper chromium layer. Then, a thin dielectric film of alumina (Al.sub.2 O.sub.3) is evaporated onto the two remaining metal layers forming the electrodes. This combination of two layer metal electrodes and dielectric layer is very useful in providing a self-shifting plasma display panel having high quality and reliability.

Gas discharge panel having plurality of shift electrodes

A first glass substrate supports a plurality of electrodes arranged in concentric circles. A second glass substrate supports a plurality of shift electrodes arranged radially. The substrates are positioned face to face with a specified space between them filled with an ionizable gas. The radially arranged shift electrodes are periodically connected to common buses each connected to a corresponding one of a plurality of shift driver circuits equal in number to the buses. At least one of the shift electrodes is selectively connected to a write driver circuit and to one of the shift driver circuits. When the one of the shift electrodes is energized by a signal from the write driver circuit, discharge spots are generated at the intersection of the one of the shift electrodes and the concentrically arranged electrodes. The discharge spots are endlessly shifted in clockwise or counterclockwise direction along the concentrically arranged electrodes through the switching of operating voltages applied sequentially to the shift electrodes from the shift driver circuits via the buses.

Gas discharge display apparatus

Growing community of inventors

Yokohama, Japan

Yoichi Ueda