National Institute of Advanced Industrial Science and Technology

Yoichi Shiota

Shinji Yuasa

Takayuki Nozaki

Hiroki Noguchi

Kazutaka Ikegami

Yoshishige Suzuki

Takurou Ikeura

According to one embodiment, a magnetic memory device includes a stacked body and a controller. The stacked body includes a first conductive layer, a second conductive layer, a first magnetic layer provided between the first conductive layer and the second conductive layer, a second magnetic layer provided between the first magnetic layer and the second conductive layer, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A resistance value per unit area of the nonmagnetic layer exceeds 20 &#x3a9;&#x3bc;m. The controller is electrically connected to the first conductive layer and the second conductive layer, and supplies a write pulse to the stacked body in a first operation. The write pulse includes a rise period, a potential of the write pulse changing from a first potential toward a second potential in the rise period, an intermediate period of the second potential after the rise period, and a fall period after the intermediate period, the potential of the write pulse changing from the second potential toward the first potential in the fall period. A duration of the fall period is longer than a duration of the rise period.

Magnetic memory device and method for controlling a write pulse

A resistance change type memory includes a variable resistance element connected between first and second bit lines and a write control circuit including first and second transistors each including a terminal connected to the first bit line. The write control circuit controls write to the variable resistance element. The write control circuit supplies a second voltage to the first bit line with a first pulse width via the second transistor in the ON state after supplying a first voltage to the first bit line via the first transistor.

Resistance change type memory including write control circuit to control write to variable resistance element

Growing community of inventors

Tsukuba, Japan

Yoichi Shiota