Fuji Electric Co., Ltd.

Yoichi Shindo

Shoji Kitamura

Akira Amano

Shinji Ogino

Hiromi Mojikawa

Satoru Nagano

Kenji Kunihara

Nobutaka Suganuma

Tadashi Umegaki

Katsue Nakata

Katsumi Oguri

Koji Nemoto

Naokazu Sakamoto

Ken Komatsu

Takao Suyama

In a resin-sealed laser diode device, in order to prevent the sealing resin on the front light-emitting end face of the laser diode chip from being deteriorated by the laser beam, a thermosetting rubber-like organic silicone resin layer is formed on the front light-emitting end face to a thickness of at least 50 &mgr;m on the extension of the surface of the active layer. On the side of the rear light-emitting end-face of the laser diode chip, the rubber-like organic silicone resin layer on the photo-diode is curved upwardly with respect to the light receiving surface of the latter. Furthermore, in order to prevent the far field pattern of the laser beam from being made irregular, at least the surface of the end-face protecting film on the light-emitting end face essentially contains silicon dioxide.

Resin-sealed laser diode device

A semiconductor laser device is provided which includes a laser diode chip mounted on a sub-mount, a monitor photo diode incorporated in the sub-mount, for monitoring a laser beam emitted by the laser diode chip, a metallic main plate mounting the laser diode chip and the monitor photo diode, an end-face breaking protective layer covering the laser diode chip and the sub-mount; and a seal resin in which the laser diode chip, the monitor photo diode, the end-face breaking preventive layer and at least a portion of the metallic main plate are sealed. In this semiconductor device, a space is provided at a portion of an interface between the end-face breaking preventive layer and the seal resin, which portion is adapted to be irradiated with a monitor laser beam emitted by the laser diode chip, with a light intensity that is not higher than a half of a peak value of the intensity of the monitor laser beam.

Semiconductor laser device and method for manufacturing the same

A semiconductor laser device is provided which includes: a metallic main plate to which a laser diode chip is fixed through a sub-mount incorporating a photo diode and which serves as an electric common for these diodes; three metallic posts that are electrically connected by wires to the main plate, laser diode chip and photo diode, respectively, and are spaced apart from the main plate; and a resin case in which the laser diode chip and sub-mount are sealed and to which fixing end portions of the main plate are fixed. The resin case secures the main plate and the three posts in position such a way as to avoid direct contact therebetween.

Semiconductor laser device

A lead frame 32 has projecting portions 36, 37 projecting in a right-and-left direction, like arms, from the sides of its broad end portion 32a. The projecting piece portions 36, 37 include mold region parts 36a, 37a that are molded within a flat type sealing resin member 35, and exposed piece portions 36b, 37b that are exposed to the outside from the sealing resin member 35. One of the exposed parts, 36b, has an arcuate segment 36c inscribed in a hypothetical circle drawn with radius R about the point of light emission, C, on an LD chip 1. The other exposed part 37b has an arcuate segment 37c inscribed in the hypothetical circle drawn with radius R. A semiconductor laser device having these arcuate segments can be fitted into a stepped accommodating hole of an instrument and set in place there, just as can a can type semiconductor laser device. The point of light emission, C, on the LD chip 1 is also fixed. Thus, neither a shift in the point of light emission, C, nor the peeling of resin arises. Moreover, an annular mounting aid 48 inscribed in the hypothetical circle drawn with radius R can be attached, instead of the arcuate segments 36c, 37c, to the exposed parts 36b, 37b, whereby the same effects can be obtained.

A semiconductor laser device includes a lead frame for electrically controlling a laser diode element having at least one end face for emitting a laser beam and for mechanically supporting the laser diode element on a planar major surface thereof with a support member interposed therebetween. A sealing resin layer, transparent to the passage of the laser beam, covers at least the laser diode element on the lead frame in a sealing manner. To improve the light emitting point stability of the laser diode element, when the cross section of the planar major surface of the lead frame is parallel to the light emitting end face, a horizontal direction is the longitudinal direction of the cross section of the lead frame, a horizontal center line defines the center of the cross section of the lead frame, and a vertical center line defines the center as viewed in the vertical direction, the sealing resin layer is shaped symmetrically with respect to the vertical center line.

A semiconductor laser device includes a lead frame for electrically controlling a laser diode element having at least one end lace for emitting a laser beam and for mechanically supporting the laser diode element on a planar major surface thereof with a support member interposed therebetween. A sealing resin layer, transparent to the passage of the laser beam, covers at least the laser diode element on the lead frame in a sealing manner. To improve the light emitting point stability of the laser diode element, when the cross section of the planar major surface of the lead frame is parallel to the light emitting end face, a horizontal direction is the longitudinal direction of the cross section of the lead frame, a horizontal center line defines the center of the cross section of the lead frame, and a vertical center line defines the center as viewed in the vertical direction, the sealing resin layer is shaped symmetrically with respect to the vertical center line.

Mold-type semiconductor laser device with reduced light-emitting point

A semiconductor laser includes a sealing resin portion with a flat portion covering a main portion of an LD element and a flange portion integrally molded with the flat portion and covering connecting leads on their terminal side. The top and bottom surfaces as well as the side faces of the flat portion are arranged symmetrically with respect to the center of the the connecting leads. The outer periphery of the flange portion has a curvature of a virtual cilcle which has a center of the laser beam emitting point of the LD chip. The virtual circle is determined to have the curvature so that the flange portion can be mounted onto an optical apparatus. The symmetrical arrangement of the flat portion suppresses displacement of the laser beam emitting point caused by thermal stress and the flange portion facilitate mounting of the semiconductor laser device in the same way as the conventional can-type semiconductor laser device.

Semiconductor laser device encapsulated in a transparent resin layer

A laser diode in which a laser diode chip having a light-emitting end face is resin-encapsulated by means of an encapsulating resin layer constituted by an epoxy-based resin or the like. An end-face-breakage preventing layer formed of a silicon-based resin having a high coefficient of light absorption in the wavelength band of a laser beam and a high bond energy is formed on the light-emitting end face. The end-face-breakage preventing layer 10 has a thickness of approximately 20 to 30 .mu.m.

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Kawasaki, Japan

Yoichi Shindo