Nec Electronics Corporation

Tyco Electronics Japan G.k.

Nec Lcd Technologies, Ltd.

Nlt Technologies, Ltd.

Yoichi Sasaki

Tatsuya Usami

Koichi Ohto

Noboru Morita

Makiya Kimura

Koji Arita

Sadayuki Ohnishi

Ryohei Kitao

Shinichi Nishida

Teruaki Suzuki

Yoshikazu Sakaguchi

Sounosuke Takahashi

Hidenobu Miyamoto

Hidenori Ikeno

Takashi Tonegawa

A connector is disclosed. The connector comprises a circuit board having a plurality of contact pads arranged in a two-dimensional fashion on a first face facing a mating connector side, the plurality of contact pads configured to make contact with a plurality of contacts of a mating connector, and a housing having a locating portion in contact with the first face of the circuit board, the locating portion locating the first face with respect to a direction of mating with the mating connector.

Connector

A connector comprises a housing, a plurality of contacts, a slide plate, and a moving plate. The contacts are configured to make contact with a plurality of contact pads of a mating connector. The slide plate has a cam face composed of a pattern of projections and recesses and expanding in a direction intersecting with the mating direction. The moving plate expands in an overlapping manner with the slide plate and receives an action of the cam face caused by the sliding of the slide plate. The moving plate moves toward the mating connector and pushes the contacts onto the contact pads of the mating connector.

Connector having a moving plate

A connector is provided that includes a housing, a contact, and a slider. The housing includes a mating connector receiving section, while the contact extends into the mating connector receiving section. The slider is positioned on the housing and includes a cam plate and a protruding wall positioned along a rear end of the cam plate.

Mating connector using slider to deform contacts

Electrical connector

A light shield member in a LCD unit includes a first shield section that includes a pile of two color filter patterns and separates each effective opening of pixel from an effective opening of the adjacent pixel, and a second shield section that includes a pile of three color filter patterns and shields a TFT area including a TFT and the vicinity thereof.

Method for manufacturing a color filter substrate

Color filter substrate and liquid crystal display unit

In a method of manufacturing a semiconductor device where at least one insulating layer structure having a metal wiring constitution is formed to thereby construct a multi-layered wiring arrangement, a first SiOCH layer is produced. Then, a surface section of the first SiOCH layer is treated to change the surface section of the first SiOCH layer to a second SiOCH layer which features a carbon (C) density lower than that of the first SiOCH layer, a hydrogen (H) density lower than that of the first SiOCH layer and an oxygen (O) density higher than that of the first SiOCH layer. Finally, a silicon dioxide (SiO) layer is formed on the second SiOCH layer.

[object Object]

A normally-white twisted-nematic mode LCD device includes a first optical compensation film between a light-incident-side polarization film and an LC cell, and a second optical compensation film between a light-emitting-side polarization film and the LC cell. The optical axis of the first (second) optical compensation film projected onto the substrate surface is substantially parallel to the longer axis of an equivalent refractive index ellipsoid of a residual retardation of the LC layer in the vicinity of a light-incident-side (light-emitting-side) substrate upon display of black color.

Normally-white twisted-nematic-mode LCD device

A semiconductor devicecomprises a SiCN filmformed on a semiconductor substrate (not shown), a first SiOC filmformed thereon, a SiCN filmformed thereon, a second SiOC filmformed thereon, a SiOfilmand a SiCN filmformed thereon. The first SiOC filmhas a barrier metal layerand viaformed therein, and the second SiOC filmhas a barrier metal layerand wiring metal layerformed therein. Carbon content of the second SiOC filmis adjusted larger than that of the first SiOC film. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.

Method of manufacturing a semiconductor device

A manufacturing method of a semiconductor device including a step of forming a via hole in an insulation layer including an organic low dielectric film, such as MSQ, SiC, and SiCN, and then embedding a wiring material in the via hole through a barrier metal. According to this method, a plasma treatment is performed after the via hole is formed and before the barrier metal is deposited, using a He/Hgas capable of replacing groups (methyl groups) made of organic constituents and covering the surface of the exposed organic low dielectric film (MSQ) with hydrogen, or a He gas capable decomposing the groups (methyl groups) without removing organic low dielectric molecules. As a result, the surface of the low dielectric film (MSQ) is reformed to be hydrophilic and adhesion to the barrier metal is hence improved, thereby making it possible to prevent the occurrence of separation of the barrier metal and scratches.

Manufacturing method of semiconductor device

A semiconductor device having improved adhesiveness between films composing an interlayer insulating film is presented by providing multilayered films in the interlayer insulating films having film density distribution, in which the film density is gradually changes. A SiOC film is deposited to a thickness of 300 nm via a plasma CVD process, in which a flow rate of trimethylsilane gas is stepwise increased. In this case, the film density of the deposited SiOC film is gradually decreased by stepwise increasing the flow rate of trimethylsilane gas. Since trimethylsilane contains methyl group, trimethylsilane has more bulky molecular structure in comparison with monosilane or the like. Thus, the film density is decreased by increasing the amount of trimethylsilane in the reactant gas.

Semiconductor device

Semiconductor device and method of manufacturing a semiconductor device

A semiconductor device has a semiconductor substrate, and a multi-layered wiring arrangement provided thereon. The multi-layered wring arrangement includes at least one insulating layer structure having a metal wiring pattern formed therein. The insulating layer structure includes a first SiOCH layer, a second SiOCH layer formed on the first SiOCH layer, and a silicon dioxide (SiO) layer formed on the second SiOCH layer. The second SiOCH layer features a carbon (C) density lower than that of the first SiOCH layer, a hydrogen (H) density lower than that of the first SiOCH layer, and an oxygen (O) density higher than that of the first SiOCH layer.

Semiconductor device having two distinct sioch layers

A method of fabricating a semiconductor device using a PECVD method is provided, which improves the adhesion strength of a deposited dielectric layer to an underlying layer and the reliability of the deposited dielectric layer. After placing a substrate in a chamber, a gas having a thermal conductivity of 0.1 W/mK or greater (e.g., Hor He) is introduced into the chamber, thereby contacting the gas with the substrate for stabilization of a temperature of the substrate. A desired dielectric layer is deposited on or over the substrate in the chamber using a PECVD method after the step of introducing the gas. As the desired dielectric layer, a dielectric layer having a low dielectric constant, such as a SiCH, SiCHN, or SiOCH layer, is preferably used.

Growing community of inventors

Kanagawa, Japan

Yoichi Sasaki