Fuji Electric Co., Ltd.

Director-general, Jiro Hiraishi, Agency of Industrial Science and

Yoichi Ryokai

Kazuo Matsuzaki

Junji Itoh

Masato Nishizawa

Takahiko Uematsu

Tatsuhiko Fujihira

Yoshihiko Nagayasu

Kazutoshi Sugimura

In a method of manufacturing a semiconductor device, an insulating film is formed on a surface of a p-type semiconductor region, and then removed from a selected portion of the p-type semiconductor region. An n-type region having a high concentration of arsenic atoms is formed in a surface layer of the selected portion of the p-type semiconductor region from which the insulating film is removed. Subsequently, boron ions are implanted over an entire surface of the device in a concentration that is lower than that of the n-type region and higher than that of the p-type semiconductor region, to a smaller depth than that of the n-type region, and heat treatment is then effected to form a high-concentration boron diffused region in a surface layer of the p-type semiconductor region. An insulating film on the n-type region and an insulating film on the boron diffused region are selectively removed, and a metallic film is formed on an exposed surface of the n-type region and an exposed surface of the boron diffused region.

Method of manufacturing semiconductor device having low contact

In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.

Field emission type electron emitting device and method of producing the

Field emission type electron emitting device with convex insulating

Growing community of inventors

Kawasaki, Japan

Yoichi Ryokai