Sony Corporation

Yoichi Otsuka

Akiko Ogino

Atsushi Toda

Atsushi Yamamoto

Toshihiko Hayashi

Kiyotaka Tabuchi

Hiromi Wano

Yasunori Koshino

Hiroshi Takahashi

Kensaku Maeda

Taku Umebayashi

Kenichi Aoyagi

Ikuo Yoshihara

Hiroshi Yoshioka

Hiroyasu Matsugai

Masaya Nagata

Keishi Inoue

Kazushi Wada

Kazunori Nagahata

Yoshiyuki Enomoto

Naoto Sasaki

Tadayuki Kimura

Tokihisa Kaneguchi

Iwao Sugiura

Takamasa Tanikuni

Isaya Kitamura

Mayoshi Aonuma

A solid-state imaging device includes: multiple micro lenses, which are disposed in each of a first direction and a second direction orthogonal to the first direction, focus the incident light into the light-receiving surface; with the multiple micro lenses of which the planar shape is a shape including a portion divided by a side extending in the first direction and a side extending in the second direction being disposed arrayed mutually adjacent to each of the first direction and the second direction; and with the multiple micro lenses being formed so that the depth of a groove between micro lenses arrayed in a third direction is deeper than the depth of a groove between micro lenses arrayed in the first direction, and also the curvature of the lens surface in the third direction is higher than the curvature of the lens surface in the first direction.

Solid-state imaging device, solid-state imaging device manufacturing method, electronic device, and lens array

Solid-state imaging device having microlenses formed with different depths and curvature and method of manufacturing thereof

A solid-state imaging device includes a plurality of pixels formed on a semiconductor substrate and include a photoelectric conversion unit; a color filter on the pixels; an on-chip microlens made of an organic film on the color filter, corresponding to each of the pixels; a first inorganic film formed on a surface of the on-chip microlens and having a higher refraction index than the on-chip microlens; and a second inorganic film formed on a surface of the first inorganic film and having a lower refraction index than the on-chip microlens and the first inorganic film, in which at least the second inorganic film includes a non-lens area at an interface of an adjacent second inorganic film.

Solid-state imaging device including an on-chip lens with two inorganic films thereon

A solid-state imaging device includes a photoelectric transformation portion and a micro lens, the micro lens has a first refractive index layer which is a first refractive index and a second refractive index layer which is a second refractive index different from the first refractive index, wherein the micro lens is configured so that a vertical cross section, which is a surface perpendicular to the capturing surface, has a rectangular shape, wherein each of the first refractive index layer and the second refractive index layer are arranged adjacent to each other in a direction along the capturing surface, and an interface between the first refractive index layer and the second refractive index layer in the vertical cross section is formed so as to follow a direction perpendicular to the capturing surface.

Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic equipment

A solid-state imaging device includes a light sensing portion which is formed on a substrate and generates a signal electric charge according to incident light; a rectangular or gradient-index on-chip micro lens formed on a light incident side above the light sensing portion; and a planarized lens layer which covers the on-chip micro lens and is formed in such a manner that a light incident surface is planarized.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus having an on-chip micro lens with rectangular shaped convex portions

A solid-state imaging device includes a light blocking layer formed in an active pixel region of a pixel region on a light incident side so as to surround a photoelectric conversion unit of each pixel and formed in an extending manner to an optical black region, a concave portion formed so as to be surrounded by the light blocking layer in a region corresponding to the photoelectric conversion unit, a first refractive index layer formed on surfaces of the light blocking layer and the concave portion and having a relatively low refractive index, a second refractive index layer formed on the first refractive index layer so as to be buried in the concave portion and having a relatively high refractive index, and an anti-flare layer formed on the first refractive index layer in the optical black region.

Solid-state imaging device, manufacturing method thereof, and electronic apparatus

Solid-state imaging device with a planarized lens layer method of manufacturing the same, and electronic apparatus

A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.

Solid-state imaging device and method for producing the same

A method for manufacturing a solid-state imaging device, in which a photoelectric conversion portion to receive light with a light-receiving surface and generate a signal charge is disposed in a substrate, includes the steps of forming a metal light-shield layer above the substrate and in a region other than a region corresponding to the light-receiving surface, forming a light-reflection layer above the metal light-shield layer, and forming a photoresist pattern layer from a negative type photoresist film formed above the light-reflection layer, by conducting an exposing treatment and a developing treatment, wherein in the forming of the light-reflection layer, the light-reflection layer includes a shape corresponding to a pattern shape of the photoresist pattern layer, and the light-reflection layer is formed in such a way as to reflect exposure light to the photoresist film in conduction of the exposing treatment in the forming of the photoresist pattern layer.

Solid-state imaging device, camera, electronic apparatus, and method for manufacturing solid-state imaging device

A solid-state imaging device has: an imaging region in which a plurality of pixels each having a photoelectric conversion element are arranged, and a color filter. The color filter includes: filter components of a first color (G), filter components of a second color (R) formed by self-alignment and each being surrounded by the filter components of the first color (G), and filter components of a third color (B) formed by self-alignment and each being surrounded by the filter components of the first color (G).

Solid-state imaging device, manufacturing method thereof, and electronic device

A satisfactory resist pattern can be formed, by focusing detection at a high accuracy, from a photoresist containing an infrared absorption dye and by an exposure method of determining focusing by an infrared light and using a photoresist containing the infrared absorption dye as the photoresist, whereby the focusing detection system is free from the effect of the secondary reflection or the like, that is, the focusing detection system is free from the effect of light transmitted or reflected in the substrate, whether the substrate is infrared light reflecting or permeating.

Photoresist composition and method of exposing photoresist

Growing community of inventors

Kanagawa, Japan

Yoichi Otsuka