Panasonic Intellectual Property Management Co., Ltd.

Panasonic Electric Works Co., Ltd.

Yoichi Nishijima

Masao Kirihara

Takafumi Okudo

Takanori Aketa

Yoshiharu Sanagawa

Takahiro Miyatake

Ryo Tomoida

Yoshifumi Watabe

Tsutomu Ichihara

Koji Tsuji

Hiroshi Yamanaka

Takaaki Yoshihara

Katsumi Kakimoto

Yosuke Hagihara

Ryo Osabe

Naoki Ushiyama

Masaaki Saito

Satoshi Hyodo

Sumio Akai

Yasufumi Shibata

An infrared sensor, which achieves a low manufacturing cost, or has high sensitivity, or in which an increase in heat capacity is reduced, is provided. The infrared sensor includes a first infrared absorbing portion, an infrared sensing portion for sensing infrared rays based on infrared rays absorbed by the first infrared absorbing portion, and a plurality of protrusions including metal and disposed apart from each other on a surface of the first infrared absorbing portion. Since an absorption rate of infrared rays is improved, sensitivity can be improved, or an increase in heat capacity can be reduced.

Infrared sensor having improved sensitivity and reduced heat generation

An infrared sensor includes an infrared detecting device, a lens, a member, a gap and a spacer. The lens is disposed above the infrared detecting device. The member forms an external surface and includes a first opening having a maximum internal diameter. The gap is disposed between the member and the lens. The spacer is disposed between the member and the lens so as to form the gap, and that is directly contact with lens. The spacer has a circular inner periphery, in planar view, which has a larger internal diameter than the maximum internal diameter of the first opening of the member.

Infrared sensor

An infrared sensor includes: an infrared detecting device; a lens disposed above the infrared detecting device; an member that is disposed at a side of an upper surface of the lens and includes an opening; and a gap that intervenes between the member and the lens and has a wider range than the opening.

An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate. A dielectric top layer covers the substrate to conceal the semiconductor device formed in the top surface of the substrate. The thermal infrared sensor carried on a sensor mount which is supported above the semiconductor device by means of a thermal insulation support. The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.

Infrared sensor unit and process of fabricating the same

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Osaka, Japan

Yoichi Nishijima