Sony Corporation

Sony Semiconductor Solutions Corporation

Yoichi Negoro

Takashi Noguchi

Hideo Yamagata

Tatsushiro Hirata

Takeyoshi Koumoto

Kenji Atsuumi

Hiroshi Kano

Hirofumi Nakamura

Mitsunari Hoshi

Shota Nishi

Hidehiko Takanashi

Akihiko Okabe

Kiyoshi Kagawa

There is provided a stacked lens structure including a first lens substrate having a first through-hole and a second lens substrate having a second-through hole. The first lens substrate may be directly bonded to the second lens substrate. The stacked lens structure may include lens resin portions, where each lens resin portion includes a lens portion configured to refract light, and a support portion configured to support the lens portion at a corresponding lens substrate, the support portion including a first portion at a side of the lens substrate, a second portion, and a third portion, where the first portion is between the lens substrate and the second portion in a cross-section view, and the third portion is between the second portion and the lens portion in the cross-section view.

Stacked lens structure, camera module, and electronic apparatus

A display unit includes: a base; a display layer having a first end surface; and a wiring layer disposed between the base and the display layer, the wiring layer being provided in a region differing from a position corresponding to the first end surface.

Display unit and electronic apparatus

In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer. Thus, there can be obtained a semiconductor layer in which a misfit dislocation can be improved.

Vapor-phase growth method, semiconductor manufacturing method and semiconductor device manufacturing method

A magnetoresistance effect element is provided with a magnetoresistance effect film (MR film) formed of alternative laminations of magnetic layers (for example, soft magnetic layers such as Fe--Ni--Co alloy layers) which are coupled anti-ferromagnetically with each other between adjacent magnetic layers and non-magnetic layers (for example, non-magnetic layers such as Cu layers) and provided with a bias soft magnetic layer (for example, SAL layer) for application of a bias magnetic filed to the magnetoresistance effect film, where the anisotropic magnetic field (Hk) in the plane of the bias medium layer is 5 Oe.ltoreq.Hk.ltoreq.15 Oe.

Magnetoresistance effect element and magnetic field detection device

Growing community of inventors

Tokyo, Japan

Yoichi Negoro